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Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

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'''''All links to Kemibrug (SDS) and Labmanager Including APV, requires login.'''''
'''''All links to Kemibrug (SDS) and Labmanager Including APV, requires login.'''''


[[Category: Equipment|Etch Wet Silicon Oxide]]
[[index.php?title=Category:Equipment|Etch Wet Silicon Oxide]]
[[Category: Etch (Wet) bath|Silicon Oxide]]
[[index.php?title=Category:Etch (Wet) bath|Silicon Oxide]]


==Wet Silicon Oxide Etch (BHF, HF and BOE 7:1 Etchant VLSI with Surfactant (wetting agent))==
==Wet Silicon Oxide Etch (BHF, HF and BOE 7:1 Etchant VLSI)==


Silicon oxide can be etched using HF. At DTU Nanolab it is mainly used in a buffered version BHF (premixed). You can find safety datasheets on Kemibrug [http://kemibrug.dk here] The BHF has a more stable etch rate and is more gentle to photoresist due to an almost pH neutral solution which makes photoresist a good masking material for the oxide etch.  
Silicon oxide can be etched using HF. At DTU Nanolab it is mainly used in a buffered version BHF (premixed). You can find safety datasheets on Kemibrug [http://kemibrug.dk here] The BHF has a stable etch rate and is gentle to photoresist due to an almost pH neutral solution which makes photoresist a good masking material for the oxide etch.  


BOE 7:1 Etchant VLSI with Surfactant (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes. If you have wetting problems in BHF try the BOE 7:1 Etchant VLSI with Surfactant. It is also a good idea to wet the sample in water for a few minutes before etching.
BOE 7:1 Etchant VLSI with Surfactant (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes. At DTU Nanolab we do not have BHF with wetting agent in a prepared bath, it's only to be used in fumehoods. It's not very often used and we do not have it as a standard chemical. Please contact DTU Nanolab if you need it.


Wafers with metals or other materials, not allowed in the dedicated oxide etch baths, can be etched using a '''plastic''' in Fume hood 01 or 02 (Acids/bases) in D-3. Samples with III-V materials (e.g. InP and GaAs) must be etched in Fume hood 07: III-V Avids/bases in D-3.
Wafers with metals or other materials, not allowed in the dedicated oxide etch baths, can be etched using a '''plastic beaker''' in Fume hood 01 or 02 (Acids/bases) in D-3. Samples with III-V materials (e.g. InP and GaAs) must be etched in Fume hood 07: III-V Avids/bases in D-3.
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'''The user manual for Oxide etch 2: BHF (clean), APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=378 by clicking here]
'''The user manual for Oxide etch 2: BHF (clean), APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=378 by clicking here]
'''The user manual for Oxide etch 3: 10% HF, APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=380 by clicking here]


'''The user manual for various HF baths in RCA and Fume hoods, APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=64 by clicking here]
'''The user manual for various HF baths in RCA and Fume hoods, APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=64 by clicking here]
'''<big>Working with HF above 13% is only allowed by Nanolab staff</big>'''


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*Mainly for removing native oxide
*Mainly for removing native oxide
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Mainly for etching deep into borofloat or quartz wafers
*Mainly for etching deep into borofloat or quartz wafers. '''Only Nanolab staff are allowed to work with this HF'''.
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Etching of silicon oxide - especially for etching small holes
*Etching of silicon oxide - especially for etching small holes
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*Silicon nitride
*Silicon nitride
*Poly silicon
*Poly silicon
*Photoresist
*Photoresist delaminates
*Blue film
*Blue film
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Photoresist  
*Photoresist delaminates
*Silicon nitride (Only on quartz wafers)  
*Silicon nitride (Only on quartz wafers)  
*Poly silicon (Only on quartz wafers)  
*Poly silicon (Only on quartz wafers)  
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<gallery caption="Different places to do wet silicon oxide etch" widths="420px" heights="425px" perrow="5"> image:BHF clean.JPG|BHF in wetbench 04 in D-3 (Oxide etch 2: BHF (clean)). Wet silicon oxide etch bath positioned to the right in the wetbench. This bath can also be used for BHF with wetting agent.  
<gallery caption="Different places to do wet silicon oxide etch" widths="420px" heights="425px" perrow="5"> image:BHF clean.JPG|BHF in wetbench 04 in D-3 (Oxide etch 2: BHF (clean)). Wet silicon oxide etch bath positioned to the right in the wetbench. This bath can also be used for BHF with wetting agent.  
image:KOH_BHF.JPG|BHF in wetbench 01 Si etch in D-3 (Oxide etch 1: BHF). The BHF bath is positioned in the middle of the bench. This is primarily used to remove oxide before and after a Si etch.
image:KOH_BHF.JPG|BHF in wetbench 01 Si etch in D-3 (Oxide etch 1: BHF). The BHF bath is positioned in the middle of the bench. This is primarily used to remove oxide before and after a Si etch.
image:BHF clean.JPG|BHF in wetbench 05 in D-3 (Oxide etch 3: 10% HF). Wet silicon oxide etch bath positioned to the right in the wetbench. This bath can also be used for BHF, BHF with wetting agent or 40% HF on request. This bath is also used for cleaning quarts carriers from the PECVD4 system.
image:RCA-HF.jpg|HF baths in RCA bench in B-1. These may only be used together with RCA cleaning and furnace processes.
image:RCA-HF.jpg|HF baths in RCA bench in B-1. These may only be used together with RCA cleaning and furnace processes.
</gallery>
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!  
!  
! 1% HF in RCA Bench
! 1% HF in RCA Bench
! 1% HF PP-bath
! 10% HF in D3 wet bench 5 (Oxide etch 3)
! 1% HF Plastic beaker
! 1% HF Plastic beaker


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!Size of substrate
!Size of substrate
|2"-6" wafers
|2"-6" wafers
|2"- 4" wafers or any that fits in a dedicated holder
|2"- 6" wafers or any that fits in a dedicated holder
|2"- 4" wafers or any that fits in a dedicated holder
|2"- 4" wafers or any that fits in a dedicated holder
|-
|-
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<br clear="all" />
<br clear="all" />


==Comparing different 40% HF baths==
==40% HF==
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="2" style="text-align:left;"  
|-
|-


|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
! 40% HF PP-bath
! 40% HF in Plastic beaker, only done by Nanolab staff
! 40% HF Plastic beaker


|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Batch size!
!Batch size!
|1-25 wafers at a time
|1 wafer at a time
|1 wafer at a time
|-
|-
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Size of substrate
!Size of substrate
|Any that fits to a dedicated holder
|Any that fits to a dedicated holder
|Any that fits to a dedicated holder
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Allowed materials
!Allowed materials
|All materials
|All materials  
|All materials  
|-
|-