Specific Process Knowledge/Thin film deposition: Difference between revisions
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[[/Deposition of Titanium Nitride|Titanium Nitride]] - ''conductive ceramics'' <br/> | [[/Deposition of Titanium Nitride|Titanium Nitride]] - ''conductive ceramics'' <br/> | ||
[[/Deposition of Niobium Titanium Nitride| Niobium Titanium Nitride]] - ''superconductors''<br/> | [[/Deposition of Niobium Titanium Nitride| Niobium Titanium Nitride]] - ''superconductors''<br/> | ||
[[/Deposition of Niobium Nitride| Niobium Nitride (NbN)]] - ''superconductors''<br/> | |||
[[/Deposition of Aluminium Nitride| Aluminum Nitride (Al<sub>x</sub>N<sub>y</sub>)]]<br/> | [[/Deposition of Aluminium Nitride| Aluminum Nitride (Al<sub>x</sub>N<sub>y</sub>)]]<br/> | ||
[[/Deposition of Scandium Nitride| Scandium Nitride (Sc<sub>x</sub>N<sub>y</sub>)]]<br/> | [[/Deposition of Scandium Nitride| Scandium Nitride (Sc<sub>x</sub>N<sub>y</sub>)]]<br/> | ||
[[/Deposition of Tungsten Nitride| Tungsten Nitride (W<sub>x</sub>N<sub>y</sub>)]]<br/> | |||
[[/Deposition of Tantalum Nitride| Tantalum Nitride (Ta<sub>x</sub>N<sub>y</sub>)]]<br/> | |||
|style="background: #DCDCDC"| | |style="background: #DCDCDC"| | ||
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[[/Sputter deposition of metals and alloys|FeMn]]<br/> | [[/Sputter deposition of metals and alloys|FeMn]]<br/> | ||
[[/Sputter deposition of metals and alloys|MnIr]]<br/> | [[/Sputter deposition of metals and alloys|MnIr]]<br/> | ||
[[/ | [[/Deposition of NbTi|NbTi]] <br/> | ||
[[/Deposition of NiFe|NiFe]]<br/> | [[/Deposition of NiFe|NiFe]]<br/> | ||
[[/Deposition of NiV|NiV]] alloy <br/> | [[/Deposition of NiV|NiV]] alloy <br/> | ||
[[/Deposition of TiW|TiW]] alloy (10%/90% by weight) <br/> | [[/Deposition of TiW|TiW]] alloy (10%/90% by weight) <br/> | ||
[[/Deposition of MoSi|MoSi]] alloy (50%/50% by At.%) <br/> | |||
And an electroceramic: | And an electroceramic: | ||
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*[[/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3) ]] - ''Cluster-based multi-chamber high vacuum sputtering deposition system'' | *[[/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3) ]] - ''Cluster-based multi-chamber high vacuum sputtering deposition system'' | ||
*[[/Lesker|Lesker]] - ''Sputter tool'' | *[[/Lesker|Lesker]] - ''Sputter tool'' | ||
*[[/thermalevaporator|Thermal evaporator]] | *[[/thermalevaporator|Thermal evaporator]] | ||
*[[/Temescal|E-Beam Evaporator (Temescal)]] | *[[/Temescal|E-Beam Evaporator (Temescal)]] | ||
Latest revision as of 18:00, 30 July 2025
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Choose material to deposit
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Choose deposition equipment
| PVD - Physical vapor deposition | LPCVD - low pressure chemical vapor deposition | PECVD - plasma enhanced chemical vapor deposition | ALD - atomic layer deposition | Coaters - for polymers | Others
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See the Lithography/Coaters page for coating polymers |
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