Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions
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!Generel description | !Generel description | ||
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*Evaporation of Ti or | *Evaporation of Ti or Ti<sub>2</sub>O<sub>3</sub> pellets in the presence of O<sub>2</sub>. | ||
*Can heat up to 250 °C. | |||
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*Reactive DC sputtering of Ti target | *Reactive DC sputtering of Ti target | ||
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*Reactive pulsed DC sputtering | *Reactive pulsed DC sputtering | ||
*Reactive HIPIMS (high-power impulse magnetron sputtering) | *Reactive HIPIMS (high-power impulse magnetron sputtering) | ||
*Can heat up to 6000 °C | |||
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*Reactive DC sputtering of Ti target in Ar/O<sub>2</sub> (10 % O<sub>2</sub>) plasma | *Reactive DC sputtering of Ti target in Ar/O<sub>2</sub> (10 % O<sub>2</sub>) plasma | ||
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*ALD (atomic layer deposition) of TiO<sub>2</sub> | *ALD (atomic layer deposition) of TiO<sub>2</sub> | ||
*Can heat up to 350 °C | |||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!Stoichiometry | !Stoichiometry and form | ||
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*Can probably be varied, expect somewhat O-poor composition | *Can probably be varied, expect somewhat O-poor composition | ||