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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions

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|Etch rate of SiO2
|Etch rate of SiO2
|'''~42nm/min [41-43 nm/min over a 6" wafer]
|'''~42nm/min [41-43 nm/min over a 6" wafer]  
|'''13.7-14.7 nm/min [4" on carrier]
|'''13.7-14.7 nm/min [4" on carrier]


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File:Contour Plot etch rates Si.jpg|Etch rate map of Si etch on 4" wafer (on 6" carrier)
File:Contour Plot etch rates Si.jpg|Etch rate map of Si etch on 4" wafer (on 6" carrier)
</gallery>
</gallery>
==Test section - do not use==
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! A !! Header text !! Header text
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| Example || Example || Example
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| Example || Example || Example
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