Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions
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image:C01548.04-A.jpg|Wafer C01548.04: 35 % exposed area | image:C01548.04-A.jpg|Wafer C01548.04: 35 % exposed area | ||
image:C01548.05-A.jpg|Wafer C01548.05: 50 % exposed area | image:C01548.05-A.jpg|Wafer C01548.05: 50 % exposed area | ||
</gallery> | </gallery> | ||
''Please note that without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform (batch C01548).'' | |||
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<gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3"> | <gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3"> | ||
image:C01549.01-A.jpg|Wafer C01549.01: 5 % exposed area. Some 190 nm of 600 nm oxide remains. | image:C01549.01-A.jpg|Wafer C01549.01: 5 % exposed area. Some 190 nm of 600 nm oxide remains. | ||