Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

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 The standard recipes, quality control limits and results for the Boron Drive-in + Pre-dep furnace (A1) and the Phosphorus Drive-in furnace (A3) can be found here:
-*[[Specific Process Knowledge/Thermal Process/A1 Furnace Boron drive-in|Standard recipes, QC limits and results for the Boron Drive-in + Predep furnace (A1)]]
+*[[Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace|Standard recipes, QC limits and results for the Boron Drive-in + Predep furnace (A1)]]
 *[[Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace|Standard recipes, QC limits and results for the Phosphorus Drive-in furnace (A3)]]
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 [[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Al-Anneal furnace (C4)]]
 !
-[[Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8")|Oxidation 8" (E1)]]
+[[Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8")|Oxidation 8" furnace (E1)]]
 !
 [[Specific Process Knowledge/Thermal Process/Resist Pyrolysis furnace|Resist Pyrolysis furnace (research tool)]]
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 |-style="background:WhiteSmoke; color:black"
 !Generel description
-|Dry and wet oxidation. Boron pre-deposition and boron drive-in of boron are also done in the furnace.
+|
-|Dry oxidation of gate oxide and other very clean oxides.
+*Dry and wet oxidation
-|Dry and wet oxidation. Phosphorous drive-in is also done in the furnace.
+*Boron pre-deposition and boron drive-in are also done in the furnace
-|Dry and wet oxidation of 100 mm and 150 mm wafers. Oxidation of new wafers without RCA cleaning. Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4.
+|
-|Dry and wet oxidation and annealing of wafers from Wafer Bonder 02 and from PECVD4 and PECVD3.
+*Dry oxidation of e.g. gate oxides layers
-|Dry oxidation of 100 mm wafers and small samples
+|
-|Dry and wet oxidation of 150 mm and 200 mm wafers
+*Dry and wet oxidation
-|Dry oxidation of silicon and annealing in N<sub>2</sub>. But the furnace is mainly being used for pyrolysis of different resists
+*Phosphorous drive-in is also done in the furnace
-|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
+|
+*Dry and wet oxidation of 100 mm and 150 mm wafers
+*Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4
+|
+*Dry and wet oxidation and annealing of wafers from the wafer bonders and from PECVD4 and PECVD3
+|
+*Dry oxidation of 100 mm wafers and small samples
+|
+*Dry and wet oxidation of 150 mm and 200 mm wafers
+|
+*Dry oxidation of silicon and annealing in N<sub>2</sub>. But the furnace is mainly being used for pyrolysis of different resists
+|
+*Rapid thermal processing:
+**RTA (annealing)
+**RTO (oxidation)
+**RTN (nitridation)
+**RTH (hydrogenation)
 |-
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 |
 *Dry: O<sub>2</sub>
-*Wet: H<sub>2</sub>O (bubbler)
+*Wet: H<sub>2</sub>O (steamer)
 |
 *Dry: O<sub>2</sub>
@@ Line 166: / Line 182: @@
 *1-30 100 mm wafers
 |
-*Small samples on a carrier wafer, horizontal
 *1-30 50 mm wafers
 *1-30 100 mm wafers
 *1-30 150 mm wafers
 |
-*Small samples on a carrier wafer, horizontal
 *1-30 50 mm wafers
 *1-30 100 mm wafers
+*Small samples on a carrier wafer, horizontal
 |
-*Small samples on a carrier wafer, horizontal
 *1-30 50 mm wafers
 *1-30 100 mm wafers
-*1-2 150 wafers, horizontal, less good uniformity
+*1-2 150 mm wafers, horizontal, less good uniformity
+*Small samples on a carrier wafer, horizontal
 |
 *1-50 150 mm wafers
-*1-25 200 mm wafers
+*1-50 200 mm wafers
 |
-*1-30 50 mm, 100 mm or 150 mm wafers per run
+*1-30 50 mm wafers
-*Smaller samples (placed on a Si carrier wafer)
+*1-30 100 mm wafers
+*1-30 150 mm wafers
+*Small samples on a carrier wafers, horizontal
 |
 *Single-wafer process
@@ Line 193: / Line 210: @@
 !'''Allowed materials'''
 |
-*All wafers have to be RCA cleaned, except boron pre-doped wafers from the same furnace.
+*All wafers have to be RCA cleaned, except boron pre-doped wafers from the same furnace
 |
-*All wafers have to be RCA cleaned.
+*All wafers have to be RCA cleaned
 |
-*All wafers have to be RCA cleaned, except phosphorous pre-doped wafers from furnace A4.
+*All wafers have to be RCA cleaned, except phosphorous pre-doped wafers from furnace A4
 |
-*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4.
+*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4
 |
-*All processed wafers have to be RCA cleaned, except for wafers from Wafer Bonder 02 and from PECVD4 and PECVD3
+*All processed wafers and samples have to be RCA cleaned, except for wafers from the wafers bonders and from PECVD4 and PECVD3
 |
-*
+*No RCA cleaning required
 |
-*
+*All processed wafers have to be RCA cleaned.
 |
 *Only samples for resist pyrolysis, and all sample materials have to be approved by DTU Nanolab. Samples with metals and III-V materials are NOT allowed
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 </gallery>
+==Breakdown voltage measurements==
-===Breakdown voltage measurements===
+In order to evaluate the quality of the oxide layers that can be grown in the oxidation furnaces, some breakdown voltage measurement have been made.
-Breakdown measurements have been done for A1 Boron Drive-in/Pre-dep furnace, A2 Gate Oxide furnace and A3 Phosphorus drive-in furnaces in November 2021.
-For E1  Oxidation (8") furnace, it has been done in Febuary 2022.
 The results can be found on this page:
 *[[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements]]