Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions
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'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide click here]''' | '''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide click here]''' | ||
[[Category: Equipment |Thermal C1]] | [[Category: Equipment |Thermal C1]] | ||
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!style="background:silver; color:black" align="center"|Performance | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness and quality | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow a thicker dry oxide layers) | *Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow a thicker dry oxide layers) | ||
*Wet SiO<sub>2</sub>: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C) | *Wet SiO<sub>2</sub>: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C) | ||
* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/C1 furnace break-down voltage measurement results|Break-down voltage measurement results]] | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||