Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions

← Older edit

VisualWikitext

@@ Line 23: / Line 23: @@
 <br clear="all"/>
-===Results with SiO2_res_10 and EM===
+===Results with SiO2_res_10 and with with the electro magnets on===
-[[File:Contour Plot Y31 EM_02_30 white to blue.jpg|400px|thumb|left|Etched with EM:02/30 for 2min, average etch rate: 275 nm/min +- 4.5%. The electro magnets changed the uniformity pattern and made it a bit worse ]]
+The SiO2:res_10 recipe was tested with the electromagnets on but it seems to no no good for the results.[[File:Contour Plot Y31 EM_02_30 white to blue.jpg|400px|thumb|left|Etched with EM:02/30 for 2min, average etch rate: 275 nm/min +- 4.5%. The electro magnets changed the uniformity pattern and made it a bit worse ]]
 <br clear="all"/>
@@ Line 36: / Line 36: @@
 </gallery>
-Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip that was placed in the center of a 6" wafer. The Etch profile is more angles.
+Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip, which is positioned in the center of a 6" wafer. The Etch profile is more angled.
-*I few more test with resist mask and electromagnets can be found here: [[/EM with resist mask|EM with resist mask]]
+*Removing the H2 from the recipe to get less redeposition at lower platen power (200W), EM:02/30A. Se result below. This gave significantly lower etch rate and no etching in the smallest openings.
+<gallery caption="Recipe name: SiO2_res, Recipe no. 10+EM+edit coils: C09975 coil_2500W, platen:200W, EM:02/30A, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:0sccm, 3:56 min " perrow="5">
+File:C09975_00.jpg
+File:C09975_02.jpg
+File:C09975_03.jpg
+File:C09975_04.jpg
+File:C09975_05.jpg
+</gallery>
 <br clear="all"/>
@@ Line 80: / Line 90: @@
 </gallery>
-==Testing with electromagnetic coils /Cr mask==
+==SiO2 etch with Cr mask==
 {{CC-bghe2}} <br>
+*[[/Cr mask|More tests with Cr mask]]
+===SiO2 etch with Cr mask 100 nm and with 500 nm for the resist for the Cr etch===
+Barc etch and Cr etch were done in ICP metal using end point detection. The sample was a full 6" wafer
+<gallery caption="SiO2_res_10 2x5:00 min with 3 min TDESC clean in between 100 nm Cr mask, with 500 nm resist" widths="200px" heights="200px" perrow="6">
+File:C041630_center_07.jpg
+File:C041630_center_08.jpg
+File:C041630_center_09.jpg
+File:C041630_center_10.jpg
+File:C041630_center_11.jpg
+File:C041630_center_22.jpg
+</gallery>
+<gallery widths="200px" heights="200px" perrow="6">
+File:C041630_center_02.jpg
+File:C041630_center_03.jpg
+File:C041630_center_04.jpg
+File:C041630_center_05.jpg
+File:C041630_center_06.jpg
+</gallery>
+<gallery caption="SiO2_res_10 5:00 min 100 nm Cr mask, with 500 nm resist, resist/Cr stripped after etch in plasma asher 35min" widths="250px" heights="250px" perrow="4">
+File:S0411376_profile_20.jpg| 200nm/400nm
+File:S0411376_profile_13.jpg|250nm/500nm
+File:S0411376_profile_14.jpg| 400nm/800nm
+File:S0411376_profile_15.jpg|500nm/1000nm
+File:S0411376_profile_17.jpg|1000nm/2000nm
+File:S0411376_profile_18.jpg|2000nm/4000nm
+</gallery>
+===Testing with electromagnetic coils /Cr mask===
+{{CC-bghe2}} <br>
 When testing with decreased platen power on the SiO2_10 standard recipe the uniformity got very bad. I then tested with the electromagnetics coil to see if that could affect the uniformity. There is an outer coil that can be varied between 0 A and 10 A and an inner coil that can be varied between 0 A and 30 A. The first tests were done on Si/SiO2(1µm) without pattern and measured on the ellipsometer.
@@ Line 140: / Line 184: @@
 File:C09721_center_22.jpg
 </gallery>
-*[[/Cr mask|More tests with Cr mask]]