Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3/SiO2 etch: Difference between revisions
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Pegasus 3 is not meant to be used as an SiO2 etcher. Please do not develop SiO2 recipes on this machine. Often SiO2 etch recipes are very polymerizing and that can disturb the chamber conditions for the silicon etching recipes. | Pegasus 3 is not meant to be used as an SiO2 etcher. Please do not develop SiO2 recipes on this machine. Often SiO2 etch recipes are very polymerizing and that can disturb the chamber conditions for the silicon etching recipes. | ||
The recipe developed here is only for etching through a very thin SiO2 layer and does not have a high selectivity to silicon to avoid the recipe | The recipe developed here is only for etching through a very thin SiO2 layer and does not have a high selectivity to silicon. This is to avoid the recipe from becoming too polymerizing. It is also not very uniform over the wafer, so when it is used for etching down to silicon it will also etch a lot in the silicon and in areas more than other. | ||
==Test work done== | ==Test work done== | ||
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|+ Etch uniformity | |||
File:Peg3 SiO2 uniformity Y34 to Y40.jpg | |- | ||
File:Peg3 SiO2 uniformity normalized Y34 to Y40.jpg | ! SiO2 etch rate uniformity !! SiO2 etch rate uniformity normalized to center!! Si Etch rate uniformity | ||
File:Peg3 Si etch uniformity Y38 and Y40.jpg | |- | ||
| [[File:Peg3 SiO2 uniformity Y34 to Y40.jpg]] || [[File:Peg3 SiO2 uniformity normalized Y34 to Y40.jpg]] || valign="top"| [[File:Peg3 Si etch uniformity Y38 and Y40.jpg]] | |||
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