Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3/SiO2 etch: Difference between revisions
| (7 intermediate revisions by the same user not shown) | |||
| Line 27: | Line 27: | ||
| Y40 || 8.33 sccm|| 50 sccm|| 100 sccm|| 100 W || 10 mTorr || ±15.1% || 35.8 n/min (lowest)|| 70.8@15s, 107.5@5min || ± 17.6%@15s, ± 11.1%@4min | | Y40 || 8.33 sccm|| 50 sccm|| 100 sccm|| 100 W || 10 mTorr || ±15.1% || 35.8 n/min (lowest)|| 70.8@15s, 107.5@5min || ± 17.6%@15s, ± 11.1%@4min | ||
|} | |} | ||
[[File:Peg3 SiO2 uniformity Y34 to Y40.jpg | |||
[[File:Peg3 SiO2 uniformity normalized Y34 to Y40.jpg| | {| class="wikitable" | ||
|+ Etch uniformity | |||
|- | |||
! SiO2 etch rate uniformity !! SiO2 etch rate uniformity normalized to center!! Si Etch rate uniformity | |||
|- | |||
| [[File:Peg3 SiO2 uniformity Y34 to Y40.jpg]] || [[File:Peg3 SiO2 uniformity normalized Y34 to Y40.jpg]] || valign="top"| [[File:Peg3 Si etch uniformity Y38 and Y40.jpg]] | |||
|} | |||