Jump to content

Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3/SiO2 etch: Difference between revisions

← Older edit
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,301 edits
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,301 edits
 
(15 intermediate revisions by the same user not shown)
Line 11: Line 11:
|+ Tests with SiO2 etch
|+ Tests with SiO2 etch
|-
|-
! Wafer number !! C4F8 !! SF6 flow !! Ar !! Platen power !! Pressure
! Wafer number !! C4F8 !! SF6 flow !! Ar !! Platen power !! Pressure || SiO2 Uniformity results || SiO2 Center Etch rate ||Si Center Etch rate || Si Uniformity
|-
|-
| Y34 || 50 sccm|| 50 sccm|| 0 sccm|| 100 W || 80 mTorr  
| Y34 || 50 sccm|| 50 sccm|| 0 sccm|| 100 W || 80 mTorr || ±23.3% || 36.0 nm/min (highest)|| ||
|-
|-
| Y35 || 25 sccm|| 75 sccm|| 0 sccm|| 100 W || 80 mTorr  
| Y35 || 25 sccm|| 75 sccm|| 0 sccm|| 100 W || 80 mTorr || ±20.8% || 41.3 nm/min (highest) || ||
|-
|-
| Y36 || 25 sccm|| 75 sccm|| 0 sccm|| 100 W || 10 mTorr  
| Y36 || 25 sccm|| 75 sccm|| 0 sccm|| 100 W || 10 mTorr || ±22.1% || 36.2 nm/min (lowest) || ||
|-
|-
| Y37 ||25 sccm|| 75 sccm|| 0 sccm|| 100 W || 40 mTorr  
| Y37 ||25 sccm|| 75 sccm|| 0 sccm|| 100 W || 40 mTorr || ±24.6% || 24.4 nm/min (lowest) || ||
|-
|-
| Y38 || Example || Example || Example || Example || Example
| Y38 || 25 sccm|| 75 sccm|| 0 sccm|| 100 W || 60 mTorr || ± 8.1% || 34.0 nm/min (highest in center and at edge) || 141.4@15s, 137.5@2min || ± 13.9%@15s, ± 16.5%@2min
|-
|-
| Y39 || Example || Example || Example || Example || Example
| Y39 || 50 sccm|| 150 sccm|| 0 sccm|| 100 W || 10 mTorr || ±25.0% || 34.8 nm/min (lowest)|| ||
|-
|-
| Y40 || Example || Example || Example || Example || Example
| Y40 || 8.33 sccm|| 50 sccm|| 100 sccm|| 100 W || 10 mTorr || ±15.1% || 35.8 n/min (lowest)|| 70.8@15s, 107.5@5min || ± 17.6%@15s, ± 11.1%@4min
|}
 
{| class="wikitable"
|+ Etch uniformity
|-
! SiO2 etch rate uniformity !! SiO2 etch rate uniformity normalized to center!! Si Etch rate uniformity
|-
| [[File:Peg3 SiO2 uniformity Y34 to Y40.jpg]] || [[File:Peg3 SiO2 uniformity normalized Y34 to Y40.jpg]] || valign="top"| [[File:Peg3 Si etch uniformity Y38 and Y40.jpg]]
|}
|}
[[File:Peg3 SIO2 uniformity - Contour Plot 5.jpg|400px]]
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-3/SiO2_etch"