Specific Process Knowledge/Thin film deposition/Deposition of Titanium: Difference between revisions
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==Titanium deposition == | ==Titanium deposition == | ||
Titanium can be deposited by e-beam evaporation or sputtering. | Titanium can be deposited at DTU Nanolab by e-beam evaporation or sputtering. | ||
*[[/Ti deposition in Sputter System (Lesker)|Ti deposition in Sputter System (Lesker)]] | *[[/Ti deposition in Sputter System (Lesker)|Ti deposition in Sputter System (Lesker)]] | ||
== Ti as an adhesion layer == | == Ti as an adhesion layer == | ||
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! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ||
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! General description | ! General description | ||
|E-beam deposition of Titanium (line-of-sight deposition) | |E-beam deposition of Titanium (line-of-sight deposition) | ||
|Sputter deposition of Titanium (some step coverage) | |Sputter deposition of Titanium (some step coverage) | ||
|Sputter deposition of Titanium including HiPIMS and Pulsed DC (some step coverage) | |Sputter deposition of Titanium including HiPIMS and Pulsed DC (some step coverage) | ||
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|Ar ion etch (only in E-beam evaporator Temescal) | |Ar ion etch (only in E-beam evaporator Temescal) | ||
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|RF Ar clean | |RF Ar clean | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10Å to 1 µm* | |10Å to 1 µm* | ||
|. | |. | ||
|. | |. | ||
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! Deposition rate | ! Deposition rate | ||
|1 Å/s to 10Å/s | |1 Å/s to 10Å/s | ||
|Depending on process parameters, about 1 Å/s. | |Depending on process parameters, about 1 Å/s. | ||
|Depending on process parameters | |Depending on process parameters | ||
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*Up to 3x8" wafers (ask for holder) | *Up to 3x8" wafers (ask for holder) | ||
*smaller pieces | *smaller pieces | ||
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* Smaller pieces | * Smaller pieces | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Allowed | ! Allowed materials | ||
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*Almost any as long as they do not degas. See cross-contamination sheet. | *Almost any as long as they do not degas. See cross-contamination sheet. | ||
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*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet. | *Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet. | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Comment | ! Comment | ||
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'''*''' ''For thicknesses above 600 nm please write to metal@ | '''*''' ''For thicknesses above 600 nm please write to metal@nanolab.dtu.dk to ensure that there is enough material available.'' | ||