Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Titanium: Difference between revisions

Reet (talk | contribs)
No edit summary
Reet (talk | contribs)
 
(3 intermediate revisions by 2 users not shown)
Line 7: Line 7:
==Titanium deposition ==
==Titanium deposition ==


Titanium can be deposited by e-beam evaporation or sputtering.  
Titanium can be deposited at DTU Nanolab by e-beam evaporation or sputtering.  


*[[/Ti deposition in Sputter System (Lesker)|Ti deposition in Sputter System (Lesker)]]
*[[/Ti deposition in Sputter System (Lesker)|Ti deposition in Sputter System (Lesker)]]
In the chart below you can compare the different deposition equipment.


== Ti as an adhesion layer ==
== Ti as an adhesion layer ==
Line 30: Line 27:
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
Line 39: Line 34:
! General description
! General description
|E-beam deposition of Titanium (line-of-sight deposition)
|E-beam deposition of Titanium (line-of-sight deposition)
|E-beam deposition of Titanium (line-of-sight deposition)
|Sputter deposition of Titanium (some step coverage)
|Sputter deposition of Titanium (some step coverage)
|Sputter deposition of Titanium (some step coverage)
|Sputter deposition of Titanium including HiPIMS and Pulsed DC (some step coverage)
|Sputter deposition of Titanium including HiPIMS and Pulsed DC (some step coverage)
Line 49: Line 42:
|Ar ion etch (only in E-beam evaporator Temescal)
|Ar ion etch (only in E-beam evaporator Temescal)
|
|
|
|RF Ar clean
|RF Ar clean
|RF Ar clean
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å to 1 µm*
|10Å to 1 µm*
|10Å to 1 µm*
|.
|.
|.
|.
|.
Line 64: Line 53:
! Deposition rate
! Deposition rate
|1 Å/s to 10Å/s
|1 Å/s to 10Å/s
|few Å/s to 15Å/s
|Depending on process parameters, see [[Sputtering of Ti in Wordentec|here]].
|Depending on process parameters, about 1 Å/s.
|Depending on process parameters, about 1 Å/s.
|Depending on process parameters
|Depending on process parameters
Line 76: Line 63:
*Up to 3x8" wafers (ask for holder)
*Up to 3x8" wafers (ask for holder)
*smaller pieces
*smaller pieces
|
*24x2" wafers or
*6x4" wafers or
*6x6" wafers
|
*24x2" wafers or
*6x4" wafers or
*6x6" wafers
|
|
* Smaller pieces
* Smaller pieces
Line 92: Line 71:


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Allowed substrates
! Allowed materials


|  
|  
Line 98: Line 77:
|
|
*Almost any as long as they do not degas. See cross-contamination sheet.
*Almost any as long as they do not degas. See cross-contamination sheet.
|
*Almost any as long as they do not degas. See cross-contamination sheet.
|
*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet.
|
|
*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet.
*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet.
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Allowed materials
|
*Almost any as noted above
|
*Almost any as noted above
|
*Almost any as noted above
|
*Almost any as noted above
|
*Almost any as noted above
|-style="background:LightGrey; color:black"
! Comment
! Comment
|
|  
|
|
|
|


Line 130: Line 91:


|}
|}
'''*'''  ''For thicknesses above 600 nm please write to metal@nanotech.dtu.dk to ensure that there is enough material available.''
'''*'''  ''For thicknesses above 600 nm please write to metal@nanolab.dtu.dk to ensure that there is enough material available.''