Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions
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== Deposition of | == Deposition of silver == | ||
Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment. | Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment. | ||
== Sputter deposition of silver == | |||
* [[Specific Process Knowledge/Thin film deposition/Lesker |Sputter deposition of Silver in Lesker]]. | |||
== Thermal deposition of silver == | |||
== Thermal deposition of | |||
* [[/Deposition of Silver in Thermal Evaporator|Thermal deposition of Silver in the Thermal Evaporator]] | * [[/Deposition of Silver in Thermal Evaporator|Thermal deposition of Silver in the Thermal Evaporator]] | ||
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==Comparison of | ==Comparison of Deposition Equipment for Silver== | ||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! General description | ! General description | ||
| E-beam deposition of Ag | | E-beam deposition of Ag (line-of-sight, very good thickness uniformity) | ||
| Thermal deposition of Ag (line-of-sight) | |||
| Thermal deposition of Ag | | Sputter deposition of Ag (some step coverage) | ||
| Sputter deposition of Ag | |||
| Sputter deposition of Ag including pulsed DC and HiPIMS | | Sputter deposition of Ag including pulsed DC and HiPIMS | ||
|- | |- | ||
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! Pre-clean | ! Pre-clean | ||
| Ar ion beam | | Ar ion etch (only in E-beam evaporator Temescal) | ||
| none | | none | ||
| RF Ar clean | | RF Ar clean | ||
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|10Å to 1µm* | |10Å to 1µm* | ||
|10Å to 0.5µm ** | |10Å to 0.5µm ** | ||
|10Å to about 2000Å | |10Å to about 2000Å | ||
|10Å to ? | |10Å to ? | ||
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|1 to 10Å/s | |1 to 10Å/s | ||
|5Å/s | |5Å/s | ||
|Dependent on process parameters. | |Dependent on process parameters. | ||
|Dependent on process parameters. | |Dependent on process parameters. | ||
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*Up to 4x6" wafers or | *Up to 4x6" wafers or | ||
*Up to 3x8" wafers | *Up to 3x8" wafers | ||
or | |||
*smaller pieces | *smaller pieces | ||
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*Up to 3x4" wafers | *Up to 3x4" wafers | ||
*smaller pieces | *smaller pieces | ||
| | | | ||
*1x6" wafers or | *1x6" wafers or | ||
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*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | *Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | ||
| | | | ||
*Almost any as long as it does not outgas | *Almost any as long as it does not outgas. See cross-contamination sheet in Labmanager. | ||
| | | | ||
*Almost any | * Almost any that do not degas. See also the [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=244 cross-contamination sheet] | ||
| | | | ||
*Almost any | *Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3] | ||
|-style="background:whitesmoke; color:black" | |-style="background:whitesmoke; color:black" | ||
! Comment | ! Comment | ||
| Pumpdown approx 20 min. Possible to tilt the wafer. | | Pumpdown approx 20 min. Possible to tilt the wafer to achieve tunable step coverage. | ||
| Pumpdown approx 15 min. | | Pumpdown approx 15 min. | ||
| | |Load and transfer < 10 minutes | ||
|Load and transfer approx. 12 minutes | |Load and transfer approx. 12 minutes | ||
|- | |- | ||
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'''**''' ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk'' | '''**''' ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk'' | ||