Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si

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Test of the deposition rate of Silicon and film characteristics

The work in this section was done by Kristian Hagsted Rasmussen @DTU Danchip before 2012 -

with followup by Berit Herstrøm (bghe) @DTU Nanolab.

Please note that it is from 2022 no longer possible to deposit Si with the Ion beam etcher here at Nanolab.

	Recipe 2 - with the small grids)
Platen angle	10 degrees
Platen rotation speed	20rpm
Ar(N) flow	4 sccm
Ar(dep. source) flow	8 sccm
I(N)	240mA
Power setting	700W
I(B)	200mA
V(B)	1100V
Vacc(B)	400V

Results with recipe 2 and the small grids

Depostion time	10 min (2016-08-04 bghe)
Characterization method	Ellipsometer 3 angles
Deposition thickness	50 nm (2016-08-04 bghe)
Deposition rate	5.0 nm/min
Refractive index @632nm	n=? k=?
Refractive index @1000nm @950nm using the ellipsometer	n=? k=?
Refractive index @1550nm	n=? k=?

Recipe

	Recipe 1 - with the large grids)
Platen angle	10 degrees
Platen rotation speed	20rpm
Ar(N) flow	4 sccm
Ar(dep. source) flow	8 sccm
I(N)	320mA
Power	700W
I(B)	280mA
V(B)	1100V
Vacc(B)	400V

Results with recipe 1 and the large grids

Depostion time	10 min (before 2013)	30 min (before 2013)	30 min (before 2013)	30 min (2013-10-4)
Characterization method	FilmTek	FilmTek	Ellipsometer 3 angles	Ellipsometer 3 angles
Deposition thickness	71 nm	229 nm	242 nm	194 nm (2013-10-4)
Deposition rate	7.1 nm/min	7.6 nm/min	8.1 nm/min	6.5 nm/min
Refractive index @632nm	n=4.55 k=0.826	n=4.916 k=0.547	n=4.589 k=0.479	n=4.625 k=0.653
Refractive index @1000nm @950nm using the ellipsometer	n=? k=?	n=4.297 k=0.0836	n=4.136 k=0.189	n=4.206 k=0.183
Refractive index @1550nm	n=? k=?	n=? k=?	n=? k=?	n=3.970 k=0.062
Roughness	6.1 nm	10.4 nm	1.1 nm	0.9 nm