Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Platinum: Difference between revisions

From LabAdviser
← Older edit
VisualWikitext
Reet (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,760 edits
Reet (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,760 edits
mNo edit summary
 
Line 15: Line 15:
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
Line 21: Line 20:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
|E-beam deposition of Pt
|E-beam deposition of Pt
|E-beam deposition of Pt
|Sputter deposition of Pt
|Sputter deposition of Pt
Line 32: Line 30:
|Ar ion etch (only in E-beam evaporator Temescal)
|Ar ion etch (only in E-beam evaporator Temescal)
|none
|none
|RF Ar clean
|RF Ar clean
|RF Ar clean


Line 38: Line 35:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å - 600nm*
|10Å - 600nm*
|10Å - 600nm*
|10Å - 600nm*
|10Å - 600nm*
Line 45: Line 41:
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|0.5Å/s to 10Å/s
|0.5Å/s to 10Å/s
|0.5Å/s to 10Å/s
|up to 3.74 Å/s
|up to 3.74 Å/s
Line 57: Line 52:
*Up to 3x8" wafers (ask for holder)
*Up to 3x8" wafers (ask for holder)
*smaller wafers and pieces
*smaller wafers and pieces
|
*24x2" wafers or
*6x4" wafers or
*6x6" wafers
|
|
*1x4" wafer or
*1x4" wafer or
Line 77: Line 67:
|
|
Almost any that does not degas at your intended substrate temperature. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].  
Almost any that does not degas at your intended substrate temperature. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].  
|
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
|
|
*Almost any that does not degas.  
*Almost any that does not degas.  
Line 88: Line 76:
| Pt tends to exhibit tensile stress, see section on [[Specific Process Knowledge/Characterization/Stress measurement|stress in thin films]].
| Pt tends to exhibit tensile stress, see section on [[Specific Process Knowledge/Characterization/Stress measurement|stress in thin films]].
|
|
|
|
|
|}
|}


'''*''' ''If depositing a total of more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.''
'''*''' ''If depositing a total of more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.''

Latest revision as of 11:50, 23 June 2025

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal


Platinum deposition

Platinum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.


E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Pt Sputter deposition of Pt Sputter deposition of Pt
Pre-clean


Ar ion etch (only in E-beam evaporator Temescal) none RF Ar clean
Layer thickness 10Å - 600nm* 10Å - 600nm* 10Å - ? discuss with staff
Deposition rate 0.5Å/s to 10Å/s up to 3.74 Å/s not known yet, probably similar to 'old' Lesker system
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller wafers and pieces
  • 1x4" wafer or
  • 1x6" wafer
  • smaller pieces
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed materials

Almost any that does not degas at your intended substrate temperature. See the cross-contamination sheet.

  • Almost any that does not degas.
  • Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for PC1 and PC3
Comment Pt tends to exhibit tensile stress, see section on stress in thin films.

* If depositing a total of more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Platinum&oldid=53381"