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New page: == The nano1.1 recipe == {| border="2" cellpadding="2" cellspacing="1" |+ '''Recipe nano1.1''' |- ! rowspan="6" align="center"| Recipe | Gas | C<sub>4</sub>F<sub>8</sub> 38 sccm, SF<sub>...
 
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch/nano11 click here]'''
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<!--Checked for updates on 28/6-2023 - ok/jmli -->
<!--Checked for updates on 4/9-2025 - ok/jmli -->
{{contentbydryetch}}
== The nano1.1 recipe ==
== The nano1.1 recipe ==


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<gallery caption="The results of the nano1.0 recipe" widths="250" heights="200" perrow="3">
<gallery caption="The results of the nano1.1 recipe" widths="250" heights="200" perrow="3">
image:WF_2C4_feb2011_030.jpg |The 30 nm trenches
image:WF_2C4_feb2011_030.jpg |The 30 nm trenches
image:WF_2C4_feb2011_060.jpg|The 60 nm trenches
image:WF_2C4_feb2011_060.jpg|The 60 nm trenches
Line 44: Line 52:
C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 600 W CP, 50 W PP, 10 degs, 120 secs
C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 600 W CP, 50 W PP, 10 degs, 120 secs
</gallery>
</gallery>
{| {{table}}
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width'''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|'''30'''
| align="center" style="background:#f0f0f0;"|'''60'''
| align="center" style="background:#f0f0f0;"|'''90'''
| align="center" style="background:#f0f0f0;"|'''120'''
| align="center" style="background:#f0f0f0;"|'''150'''
| align="center" style="background:#f0f0f0;"|'''Avg'''
| align="center" style="background:#f0f0f0;"|'''Std'''
|-
| Etch rates||nm/min||183||218||232||249||256||228||29
|-
| Sidewall angle||degs||95||94||94||93||93||94||1
|-
| Cd loss ||nm/edge||-2||-4||-16||-15||-27||-13||10
|-
| CD loss foot||nm/edge||-2||-4||-16||-15||3||-7||9
|-
| Bowing||||36||40||49||48||40||42||6
|-
| Curvature||||-55||-50||-39||-39||-42||-45||7
|-
| zep||nm/min||||||||||||172||
|-
|
|}
== Comments ==
The lower coil power run may still be isotropic-looking either because of a lack of deposition in the process, or because the bias increases as the coil power is decreased, hence the wafer would have received a more phyisically-aggressive process.  Lower temp, lower coil + lower platen may be worth a look.
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