Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

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==Etching of nanostructures in silicon using the ICP Metal Etcher or DRIE Pegasus==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher click here]'''
<!--Page reviewed by jmli 9/8-2022  -->


*[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/180nmzep|The 180 nm zep resist profiles]]
[[Category: Equipment |Etch ICP Metal]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/340nmzep|The 340 nm zep resist profiles]]
[[Category: Etch (Dry) Equipment|ICP metal]]


== The ICP Metal Etcher ==


[[Image:ICP-Metal-Etcher.jpg |300x300px|thumb|The SPTS ICP Metal Etcher in the DTU Nanolab cleanroom B-1]]


{| border="2" cellspacing="1" cellpadding="3" align="center"
Name: PRO ICP <br>
!Recipe
Vendor: STS (now SPTS) <br>
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano3|Sinano3.0]]
The ICP Metal Etcher allows you to dry etch a small set of metals that includes aluminium, titanium, chromium, titanium tungsten and molybdenum (along with the related oxides and nitrides). It is, despite its name, strictly forbidden to etch (or expose to plasma) other metals. In order to do so use the [[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]].
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano31|Sinano3.1]]
 
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano32|Sinano3.2]]
'''The user manual, user APV and contact information can be found in LabManager:'''
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan33|Sinano3.3]]
 
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano34|Sinano3.4]]
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=266 LabManager]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano4|Sinano4.0]]
 
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano35|Sinano3.5]]
==Process information==
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano36|Sinano3.6]]
 
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan33-2|Sinano3.3]]
'''Standard recipes'''
 
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Aluminium|Etch of aluminium]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Titanium|Etch of titanium]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium|Etch of chromium]]
 
'''Other etch recipes'''
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Barc Etch|Barc Etch]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon|Etch of silicon]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide|Etch of silicon oxide]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride|Etch of silicon nitride]]
*[[Specific Process Knowledge/Etch/Titanium Oxide/ICP metal|Etch of Titanium Oxide]]
*[[Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal|Al<sub>2</sub>O<sub>3</sub> Etch]]
 
'''End point detection'''
*[[/Examples of End point detection|Examples of End point detection]]
 
 
==An overview of the performance of the ICP Metal Etcher and some process related parameters==
 
{| border="2" cellspacing="0" cellpadding="2"
|-
|-
!Tool
!style="background:silver; color:black;" align="left"|Purpose
|ICP Metal
|style="background:LightGrey; color:black"|Dry etch of
|ICP Metal
|style="background:WhiteSmoke; color:black"|
|ICP Metal
* Metals such as aluminium, chromium and titanium and the related oxides and nitrides
|ICP Metal
* Metals such as molybdenum, tungsten, titanium tungsten
|ICP Metal
|ICP Metal
|ICP Metal
|ICP Metal
|ICP Metal
|-
|-
!Cl<sub>2</sub> (sccm)
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance
|0
|style="background:LightGrey; color:black"|Etch rates
|0
|style="background:WhiteSmoke; color:black"|
|0
* Aluminium : ~350 nm/min (depending on features size and etch load)
|0
|0
|20
|15
|15
|0
|-
|-
!BCl<sub>3</sub> (sccm)
|style="background:LightGrey; color:black"|Anisotropy
|5
|style="background:WhiteSmoke; color:black"|
|3
*Good
|5
|5
|5
|0
|5
|5
|5
|-
|-
!HBr (sccm)
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range
|15
|style="background:LightGrey; color:black"|Process pressure
|17
|style="background:WhiteSmoke; color:black"|
|15
*~0.1-95 mTorr
|15
|15
|0
|0
|0
|15
|-
|-
! Coil power (W)
|style="background:LightGrey; color:black"|Gas flows
|900 (Load)
|style="background:WhiteSmoke; color:black"|
|900 (Forward)
{|
|900 (Forward)
| SF<sub>6</sub>: 0-100 sccm
|900 (Forward)
| O<sub>2</sub>: 0-100 sccm
|900 (Forward)
|900 (Load)
|900 (Load)
|900 (Forward)
|900 (Forward)
|-
|-
!Platen power (W)
| C<sub>4</sub>F<sub>8</sub>: 0-100 sccm
|50
| Ar: 0-300 sccm
|50
|60
|75
|90
|60
|60
|60
|75
|-
|-
! Pressure (mtorr)
| CF<sub>4</sub>: 0-100 sccm
|2
| H<sub>2</sub>: 0-30 sccm
|2
|2
|2
|2
|2
|5
|10
|2
|-
|-
| CH<sub>4</sub>: not working
| BCl<sub>3</sub>: 0-90 sccm
|-
|-
! Process time (s)
| Cl<sub>2</sub>: 0-100 sccm
|150
| HBr: 0-100 sccm
|180
|}
|120
|180
|120
|90
|120
|180
|300
|-
! Nominal line width
! colspan="9" align="center"| Etched depths (nm)
|-
! 30 nm
|198
|231
|147
|214
|163
|227
|185
|170
|295
|-
!60 nm
|256
|308
|181
|305
|229
|253
|191
|185
|411
|-
!90 nm
|259
|335
|195
|342
|255
|251
|222
|253
|566
|-
!120 nm
|277
|346
|203
|357
|262
|257
|221
|278
|600
|-
|-
!150 nm
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
|269
|style="background:LightGrey; color:black"|Batch size
|341
|style="background:WhiteSmoke; color:black"|
|205
*1 6" wafer per run
|369
*1 4" wafer per run
|265
*1 2" wafer per run
|262
*Or several smaller pieces on a carrier wafer
|225
|280
|647
|-
! Nominal line width
! colspan="9" align="center"| Etch rates in trenches (nm/min)
|-
!30 nm
|79
|77
|74
|71
|82
|151
|93
|57
|59
|-
!60 nm
|102
|103
|91
|102
|115
|169
|96
|62
|82
|-
!90 nm
|104
|112
|98
|114
|128
|167
|111
|84
|113
|-
!120 nm
|111
|115
|102
|119
|131
|171
|111
|93
|120
|-
!150 nm
|108
|114
|103
|123
|133
|175
|113
|93
|129
|-
|
! colspan="9" align="center"| Etch rates in zep resist (nm/min)
|-
! One point on wafer
|18
|27
|35
|39
|54
|45
|38
|39
|59
|-
|-
| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
*Silicon wafers
**with layers of silicon oxide or silicon (oxy)nitride
*Quartz wafers
|-
| style="background:LightGrey; color:black"|Possible masking material
|style="background:WhiteSmoke; color:black"|
*Photoresist/e-beam resist
*PolySilicon, Silicon oxide or silicon (oxy)nitride
*Aluminium, titanium or chromium
|-
|}
|}
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch|Nanoetch on DRIE-Pegasus]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano1|1 - the first nanoetch]]

Latest revision as of 10:37, 24 April 2023

Feedback to this page: click here

The ICP Metal Etcher

The SPTS ICP Metal Etcher in the DTU Nanolab cleanroom B-1

Name: PRO ICP
Vendor: STS (now SPTS)
The ICP Metal Etcher allows you to dry etch a small set of metals that includes aluminium, titanium, chromium, titanium tungsten and molybdenum (along with the related oxides and nitrides). It is, despite its name, strictly forbidden to etch (or expose to plasma) other metals. In order to do so use the IBE/IBSD Ionfab 300.

The user manual, user APV and contact information can be found in LabManager:

Equipment info in LabManager

Process information

Standard recipes

Other etch recipes

End point detection


An overview of the performance of the ICP Metal Etcher and some process related parameters

Purpose Dry etch of
  • Metals such as aluminium, chromium and titanium and the related oxides and nitrides
  • Metals such as molybdenum, tungsten, titanium tungsten
Performance Etch rates
  • Aluminium : ~350 nm/min (depending on features size and etch load)
Anisotropy
  • Good
Process parameter range Process pressure
  • ~0.1-95 mTorr
Gas flows
SF6: 0-100 sccm O2: 0-100 sccm
C4F8: 0-100 sccm Ar: 0-300 sccm
CF4: 0-100 sccm H2: 0-30 sccm
CH4: not working BCl3: 0-90 sccm
Cl2: 0-100 sccm HBr: 0-100 sccm
Substrates Batch size
  • 1 6" wafer per run
  • 1 4" wafer per run
  • 1 2" wafer per run
  • Or several smaller pieces on a carrier wafer
Substrate material allowed
  • Silicon wafers
    • with layers of silicon oxide or silicon (oxy)nitride
  • Quartz wafers
Possible masking material
  • Photoresist/e-beam resist
  • PolySilicon, Silicon oxide or silicon (oxy)nitride
  • Aluminium, titanium or chromium
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