Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Annealing click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Annealing click here]''' | ||
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==Annealing== | ==Annealing== | ||
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==Comparison of the annealing furnaces== | ==Comparison of the annealing furnaces== | ||
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! | ! | ||
[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] | [[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] | ||
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[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing|Resist Pyrolysis (research tool)]] | |||
! | ! | ||
[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2| RTP2 Jipelec]] | [[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2| RTP2 Jipelec]] | ||
! | ! | ||
[[Specific_Process_Knowledge/Thermal_Process/RTP Annealsys| RTP Annealsys (research tool)]] | [[Specific_Process_Knowledge/Thermal_Process/RTP Annealsys| RTP Annealsys (research tool)]] | ||
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|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4. | |Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4. | ||
|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | |Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | ||
|Annealing of wafers with Al and ALD deposited | |Annealing of wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> | ||
|Resist pyrolysis | |||
|Rapid thermal processing, usually, annealing (RTA). | |Rapid thermal processing, usually, annealing (RTA). | ||
| | |Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation). | ||
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*N<sub>2</sub> | *N<sub>2</sub> | ||
*(Forming gas, 5% H<sub>2</sub>/95% N<sub>2</sub> - Being tested) | |||
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*N<sub>2</sub> | |||
*(H<sub>2</sub>-N<sub>2</sub> gas mixture) | |||
*Vacuum is possible | |||
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*Ar | *Ar | ||
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*Low vacuum is possible (min. 2/3 mbar) | *Low vacuum is possible (min. 2/3 mbar) | ||
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* | *Ar | ||
* | *NH<sub>3</sub> | ||
*H<sub>2</sub> | *O<sub>2</sub> | ||
*5% H<sub>2</sub>/Ar | |||
*High vacuum is possible (10<sup>-6</sup> mbar) | |||
|- | |- | ||
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*700 <sup>o</sup>C - 1150 <sup>o</sup>C | *700 <sup>o</sup>C - 1150 <sup>o</sup>C | ||
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* | *350 <sup>o</sup>C - 1150 <sup>o</sup>C | ||
*Max 500 <sup>o</sup>C for wafers and samples with Al | |||
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*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨ | |||
*No vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C | |||
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*20 <sup>o</sup>C - 1200 <sup>o</sup>C | *20 <sup>o</sup>C - 1200 <sup>o</sup>C | ||
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* '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor''' | * '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor''' | ||
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* | *700 <sup>o</sup>C - 1200 <sup>o</sup>C | ||
* | *Max. 150 <sup>o</sup>C/s | ||
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!Substrate and Batch size | !Substrate and Batch size | ||
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*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||
*1-30 150 mm | *1-30 150 mm wafer | ||
*(Small samples on a carrier wafer, horizontal) | |||
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*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||
*Small samples on a carrier wafer, horizontal | |||
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*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||
*1 150 mm wafer | |||
*Small samples on a carrier wafer, horizontal | |||
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*1-30 50 mm, 100 mm or 150 mm wafers | |||
*Small samples on a carrier wafer, horizontal | |||
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*Single-wafer process | *Single-wafer process | ||
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*50 mm, 100 mm or 150 mm wafers | *50 mm, 100 mm or 150 mm wafers | ||
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* | *Single-wafer process | ||
*Chips on carrier | |||
*100 mm or 150 mm wafers | |||
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*All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3. | *All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3. | ||
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*Wafers with Al | *Wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> | ||
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*Samples for resist pyrolysis. | |||
*No metals allowed | |||
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*Silicon | *Silicon | ||
*Silicon oxides and nitrides | *Silicon oxides and nitrides | ||
*Quartz | *Quartz | ||
*Metals - ask for | *Metals - ask for permission | ||
*III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases. | *III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases. | ||
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* | *Silicon | ||
* | *Silicon Nitride | ||
* | *Aluminum Oxide | ||
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