Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

From LabAdviser
← Older edit
VisualWikitext
Indiogo (talk | contribs)
NLAB-Employees-701, NLAB-LabmanagerAllUsers
459 edits
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,009 edits
 
(30 intermediate revisions by 2 users not shown)
Line 4: Line 4:
==Annealing==
==Annealing==


At DTU Nanolab  we have five furnaces and an RTP (Rapid thermal annealing) that can be used annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace and Jipelec RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere, or it can be done in H<sub>2</sub> or a H<sub>2</sub>-N<sub>2</sub> gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.  
At DTU Nanolab  we have five furnaces and two RTP (rapid thermal processor) that can be used for annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace, RTP2 Jipelec and RTP Annealsys (last one, reserved to research). Annealing normally takes place in an N<sub>2</sub> atmosphere, or it can be done in H<sub>2</sub> or a H<sub>2</sub>-N<sub>2</sub> gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.  


A 20 minutes N<sub>2</sub> annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.
A 20-minute N<sub>2</sub> annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.


==Comparison of the annealing furnaces==
==Comparison of the annealing furnaces==
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
|-
|-
Line 21: Line 22:
!
!
[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]]
[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]]
!
[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing|Resist Pyrolysis (research tool)]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2| RTP2 Jipelec]]
[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2| RTP2 Jipelec]]
!
!
[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing| Multipurpose Anneal Furnace]]
[[Specific_Process_Knowledge/Thermal_Process/RTP Annealsys| RTP Annealsys (research tool)]]
|-
|-


Line 32: Line 35:
|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4.  
|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4.  
|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.
|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.
|Annealing of wafers with Al and ALD deposited AL2O3 and TiO2.
|Annealing of wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub>
|Resist pyrolysis
|Rapid thermal processing, usually, annealing (RTA).
|Rapid thermal processing, usually, annealing (RTA).
|Annealing, oxidation and resist pyrolysis of different samples
|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
|-
|-


Line 46: Line 50:
|
|
*N<sub>2</sub>
*N<sub>2</sub>
*(Forming gas, 5% H<sub>2</sub>/95% N<sub>2</sub> - Being tested)
|
*N<sub>2</sub>
*(H<sub>2</sub>-N<sub>2</sub> gas mixture)
*Vacuum is possible
|
|
*Ar
*Ar
Line 51: Line 60:
*Low vacuum is possible (min. 2/3 mbar)
*Low vacuum is possible (min. 2/3 mbar)
|
|
*N<sub>2</sub>
*Ar
*H<sub>2</sub>
*NH<sub>3</sub>
*H<sub>2</sub>-N<sub>2</sub> gas mixture
*O<sub>2</sub>
*Vacuum is possible
*5% H<sub>2</sub>/Ar
*High vacuum is possible (10<sup>-6</sup> mbar)
|-
|-


Line 65: Line 75:
*700 <sup>o</sup>C - 1150 <sup>o</sup>C
*700 <sup>o</sup>C - 1150 <sup>o</sup>C
|
|
*Up to 500 <sup>o</sup>C  
*350 <sup>o</sup>C - 1150 <sup>o</sup>C
*Max 500 <sup>o</sup>C for wafers and samples with Al
|
*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
*No vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C
|
|
*20 <sup>o</sup>C - 1200 <sup>o</sup>C
*20 <sup>o</sup>C - 1200 <sup>o</sup>C
Line 71: Line 85:
* '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor'''
* '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor'''
|
|
*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
*700 <sup>o</sup>C - 1200 <sup>o</sup>C
*No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C
*Max. 150 <sup>o</sup>C/s
|-
|-


Line 79: Line 93:
!Substrate and Batch size  
!Substrate and Batch size  
|
|
*Small samples on a carrier wafer, horizontal
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
*1-30 150 mm wafers
*1-30 150 mm wafer
*(Small samples on a carrier wafer, horizontal)
|
|
*Small samples on a carrier wafer, horizontal
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
*Small samples on a carrier wafer, horizontal
|
|
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
*1 150 mm wafer
*Small samples on a carrier wafer, horizontal
|
*1-30 50 mm, 100 mm or 150 mm wafers
*Small samples on a carrier wafer, horizontal
|
|
*Single-wafer process
*Single-wafer process
Line 95: Line 114:
*50 mm, 100 mm or 150 mm wafers
*50 mm, 100 mm or 150 mm wafers
|
|
*1-30 50 mm, 100 mm or 150 mm wafers  
*Single-wafer process
*1-50 200 mm wafers
*Chips on carrier
*Small samples on a carrier wafer, horizontal
*100 mm or 150 mm wafers
|-
|-


Line 108: Line 127:
*All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3.
*All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3.
|
|
*Wafers with Al  
*Wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub>
|
*Samples for resist pyrolysis.
*No metals allowed
|
|
*Silicon
*Silicon
*Silicon oxides and nitrides
*Silicon oxides and nitrides
*Quartz
*Quartz
*Metals - ask for permisson
*Metals - ask for permission
*III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases.
*III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases.
|
|
*Depends on the furnace quartz ware:
*Silicon
**Clean: Samples that have been RCA cleaned
*Silicon Nitride
**Metal: Almost all materials, permission is needed
*Aluminum Oxide
**Resist pyrolysis
|-
|-
|}
|}


<br clear="all" />
<br clear="all" />

Latest revision as of 15:12, 7 November 2024

Feedback to this page: click here

This page is written by DTU Nanolab internal

Annealing

At DTU Nanolab we have five furnaces and two RTP (rapid thermal processor) that can be used for annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace, RTP2 Jipelec and RTP Annealsys (last one, reserved to research). Annealing normally takes place in an N2 atmosphere, or it can be done in H2 or a H2-N2 gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.

A 20-minute N2 annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.

Comparison of the annealing furnaces

Anneal Oxide furnace (C1)

Anneal-Bond furnace (C3)

Aluminium Anneal furnace (C4)

Resist Pyrolysis (research tool)

RTP2 Jipelec

RTP Annealsys (research tool)

General description Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4. Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. Annealing of wafers and samples with Al and ALD deposited AL2O3 and TiO2 Resist pyrolysis Rapid thermal processing, usually, annealing (RTA). Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
Annealing gas
  • N2
  • N2
  • N2
  • (Forming gas, 5% H2/95% N2 - Being tested)
  • N2
  • (H2-N2 gas mixture)
  • Vacuum is possible
  • Ar
  • N2
  • Low vacuum is possible (min. 2/3 mbar)
  • Ar
  • NH3
  • O2
  • 5% H2/Ar
  • High vacuum is possible (10-6 mbar)
Process temperature
  • 700 oC - 1100 oC
  • 700 oC - 1150 oC
  • 350 oC - 1150 oC
  • Max 500 oC for wafers and samples with Al
  • Vacuum: 20 oC - 1050 oC¨
  • No vacuum: 20 oC - 1050 oC
  • 20 oC - 1200 oC
  • Max. 100 oC/s with carrier wafer or sample wafer
  • Max. 50 oC/s with SiC-coated graphite susceptor
  • 700 oC - 1200 oC
  • Max. 150 oC/s
Substrate and Batch size
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • 1-30 150 mm wafer
  • (Small samples on a carrier wafer, horizontal)
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • Small samples on a carrier wafer, horizontal
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • 1 150 mm wafer
  • Small samples on a carrier wafer, horizontal
  • 1-30 50 mm, 100 mm or 150 mm wafers
  • Small samples on a carrier wafer, horizontal
  • Single-wafer process
  • Chips on carrier
  • 50 mm, 100 mm or 150 mm wafers
  • Single-wafer process
  • Chips on carrier
  • 100 mm or 150 mm wafers
Allowed materials
  • All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4.
  • All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3.
  • Wafers and samples with Al and ALD deposited AL2O3 and TiO2
  • Samples for resist pyrolysis.
  • No metals allowed
  • Silicon
  • Silicon oxides and nitrides
  • Quartz
  • Metals - ask for permission
  • III-V materials - below 440 °C, otherwise it can lead to outgassing of toxic gases.
  • Silicon
  • Silicon Nitride
  • Aluminum Oxide


Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/Annealing&oldid=50168"