Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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==Annealing== | ==Annealing== | ||
At DTU Nanolab we have five furnaces and | At DTU Nanolab we have five furnaces and two RTP (rapid thermal processor) that can be used for annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace, RTP2 Jipelec and RTP Annealsys (last one, reserved to research). Annealing normally takes place in an N<sub>2</sub> atmosphere, or it can be done in H<sub>2</sub> or a H<sub>2</sub>-N<sub>2</sub> gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate. | ||
A 20 | A 20-minute N<sub>2</sub> annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation. | ||
==Comparison of the annealing furnaces== | ==Comparison of the annealing furnaces== | ||
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[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] | [[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] | ||
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[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing| Multipurpose Anneal Furnace]] | |||
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[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2| RTP2 Jipelec]] | [[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2| RTP2 Jipelec]] | ||
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[[ | [[Specific_Process_Knowledge/Thermal_Process/RTP Annealsys| RTP Annealsys (research tool)]] | ||
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|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | |Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | ||
|Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. | |Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. | ||
|Annealing, oxidation and resist pyrolysis of different samples. | |||
|Rapid thermal processing, usually, annealing (RTA). | |Rapid thermal processing, usually, annealing (RTA). | ||
| | |Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation). | ||
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*N<sub>2</sub> | *N<sub>2</sub> | ||
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*N<sub>2</sub> | |||
*H<sub>2</sub> | |||
*H<sub>2</sub>-N<sub>2</sub> gas mixture | |||
*Vacuum is possible | |||
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*Ar | *Ar | ||
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*Low vacuum is possible (min. 2/3 mbar) | *Low vacuum is possible (min. 2/3 mbar) | ||
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* | *Ar | ||
* | *NH<sub>3</sub> | ||
*H<sub>2</sub> | *O<sub>2</sub> | ||
*5% H<sub>2</sub>/Ar | |||
*High vacuum is possible (10<sup>-6</sup> mbar) | |||
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*Up to 500 <sup>o</sup>C | *Up to 500 <sup>o</sup>C | ||
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*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨ | |||
*No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C | |||
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*20 <sup>o</sup>C - 1200 <sup>o</sup>C | *20 <sup>o</sup>C - 1200 <sup>o</sup>C | ||
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* '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor''' | * '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor''' | ||
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* | *700 <sup>o</sup>C - 1200 <sup>o</sup>C | ||
* | *Max. 150 <sup>o</sup>C/s | ||
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*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||
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*1-30 50 mm, 100 mm or 150 mm wafers | *1-30 50 mm, 100 mm or 150 mm wafers | ||
*1-50 200 mm wafers | *1-50 200 mm wafers | ||
*Small samples on a carrier wafer, horizontal | *Small samples on a carrier wafer, horizontal | ||
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*Single-wafer process | |||
*Chips on carrier | |||
*50 mm, 100 mm or 150 mm wafers | |||
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*Single-wafer process | |||
*Chips on carrier | |||
*100 mm or 150 mm wafers | |||
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*Wafers with Al | *Wafers with Al | ||
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*Depends on the furnace quartz ware: | *Depends on the furnace quartz ware: | ||
**Clean: Samples that have been RCA cleaned | **Clean: Samples that have been RCA cleaned | ||
**Metal: Almost all materials, permission is needed | **Metal: Almost all materials, permission is needed | ||
**Resist pyrolysis | **Resist (for pyrolysis) | ||
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*Silicon | |||
*Silicon oxides and nitrides | |||
*Quartz | |||
*Metals - ask for permission | |||
*III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases. | |||
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*Silicon | |||
*Silicon Nitride | |||
*Aluminum Oxide | |||
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Latest revision as of 16:38, 18 January 2024
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Annealing
At DTU Nanolab we have five furnaces and two RTP (rapid thermal processor) that can be used for annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace, RTP2 Jipelec and RTP Annealsys (last one, reserved to research). Annealing normally takes place in an N2 atmosphere, or it can be done in H2 or a H2-N2 gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.
A 20-minute N2 annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.
Comparison of the annealing furnaces
General description | Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4. | Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. | Annealing, oxidation and resist pyrolysis of different samples. | Rapid thermal processing, usually, annealing (RTA). | Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation). |
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