Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions
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==Aluminium Anneal furnace (C4) | [[index.php?title=Category:Equipment|Thermal C4]] | ||
[[index.php?title=Category:Thermal process|C4]] | |||
[[index.php?title=Category:Furnaces|C4]] | |||
=Aluminium Anneal furnace (C4)= | |||
[[Image:C4helstak.jpg |thumb|300x300px|Aluminium Anneal furnace (C4). Positioned in cleanroom B-1. /Photo: DTU Nanolab internal]] | [[Image:C4helstak.jpg |thumb|300x300px|Aluminium Anneal furnace (C4). Positioned in cleanroom B-1. /Photo: DTU Nanolab internal]] | ||
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==Process knowledge== | ==Process knowledge== | ||
*Annealing: | *Annealing: Look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page | ||
*Oxidation: Look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page | |||
==Overview of the performance of the Aluminium Anneal furnace and some process related parameters== | ==Overview of the performance of the Aluminium Anneal furnace and some process related parameters== | ||
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|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Annealing in N<sub>2</sub> | *Annealing in N<sub>2</sub> | ||
*Annealing in forming gas (5% H<sub>2</sub>/95 % N<sub>2</sub> - Being tested) | |||
*Dry oxidation with O<sub>2</sub> | *Dry oxidation with O<sub>2</sub> | ||
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|style="background:LightGrey; color:black"|Gas flows | |style="background:LightGrey; color:black"|Gas flows | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*N<sub>2</sub> (nitrogen): 0-10 | *N<sub>2</sub> (nitrogen): 0-10 SLM | ||
*O<sub>2</sub> (oxygen): 0-10 | *O<sub>2</sub> (oxygen): 0-10 SLM | ||
*Forming gas (5% H<sub>2</sub>/95 % N<sub>2</sub>): 0-5 SLM - Max 1 hour | |||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||
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*1-30 4" wafers (or 2" wafers) | *1-30 4" wafers (or 2" wafers) | ||
*1 6" wafer (2 6" wafers with less good uniformity) - Requires training | *1 6" wafer (2 6" wafers with less good uniformity) - Requires training | ||
*Small samples placed on a 6" dummy wafer - | *Small samples placed on a 6" dummy wafer - Requires training | ||
|- | |- | ||
| style="background:LightGrey; color:black"|Substrate materials allowed | | style="background:LightGrey; color:black"|Substrate materials allowed | ||
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*Silicon and quartz samples with | *Silicon and quartz samples with | ||
**SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> | **SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> | ||
**Aluminium | **Aluminium. Wafers are allowed to enter the furnace after aluminium lift-off or aluminium etch and resist strip in acetone | ||
**Al<sub>2</sub>O<sub>3</sub> deposited by ALD | **Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD | ||
*Other materials might be allowed | *Other materials might be allowed, but it requires a permission from the Thin Film group | ||
|- | |||
|- | |||
|} | |} | ||
==Oxidation uniformity for 6" wafers== | |||
In November 2023 an oxygen (O<sub>2</sub>) mass flow controller was connected to the furnace, so that it became possible to oxidize different wafers and samples in the furnace. | |||
The C4 furnace is made for processing of 4" wafers placed vertically in a quartz boat. However, it is possible to process 6" wafers (or small samples placed on a 6" wafer), if they are placed horizontally on the boat. | |||
Normally only one 6" wafer is being processed, because the temperature flat zone, i.e. the area inside the furnace where the temperature is uniform, is only a little longer than one quartz boat. But because there are two quartz boats available for the furnace, it has also been tried to place a 6" wafer on each boat and oxidize them at the same time as explained here. | |||
<b>Sample loading:</b> | |||
One 6" wafer was placed on each of the two quartz boats. The wafer flats were pointing towards each other, and the boats were centered above the arrow on the cantilever. The loading procedure is explained in the user manual for the furnace, but users should not do this without training, as the wafers might collide with the furnace tube, when the door closes (the tube diameter is 160 mm, and the wafer diameter is 150 mm). In order improve the temperature uniformity over the two 6" wafers, two 4" dummy wafers were placed in the end of each boat. | |||
The 6" wafer closest to the furnace door/cleanroom is numbered "w1", and the wafer closest to the furnace/service room is numbered "w2". See the image below. | |||
<b>Process parameters:</b> | |||
For the oxidation, the following process parameters were used: | |||
* Recipe: "DRY1050" | |||
* Oxidation temperature: 1050 <sup>o</sup>C | |||
* Oxidation time: 1 h 40 min | |||
<b>Results:</b> | |||
After the oxidation, the thickness of the oxide layer grown on the 6" wafers was measured in five points on each wafer using the Ellipsometer VASE. | |||
The measurement results are shown below. | |||
<i>Pernille Voss Larsen, DTU Nanolab, November 2023</i> | |||
[[image:Oxidation test 1.jpg|600x600px|left|thumb|Two 6" wafers loaded in the C4 furnace. Two 4" dummy wafers are placed in the end of each boat.]] | |||
[[image:Oxidation test 2.jpg |700x700px|left|thumb|Oxide thickness measured on the two 6" wafers]] | |||