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Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3: Difference between revisions

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This page presents the results of Scandium Nitride deposition using <b>RF</b> Reactive Sputtering in Sputter-System Metal-Nitride (PC3) commonly known as "Cluster Lesker". The deposition target is 4" <b>Sc</b> (0.25" Indium bonded to Cu plate). Source #1 was used. Materials (ScN) from this source can either be deposited with RF or p-DC sputtering although only RF mode has been tested so far.  
This page presents the results of Scandium Nitride deposition using <b>RF</b> Reactive Sputtering in Sputter-System Metal-Nitride (PC3) commonly known as "Cluster Lesker". The deposition target is 4" <b>Sc</b> (0.250" Indium bonded with indium to 3mm Cu plate). Source #1 was used. Materials (ScN) from this source can either be deposited with RF or p-DC sputtering although only RF mode has been tested so far.  




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Samples: 6" Si.
Samples: 6" Si without native oxide (HF-treated).


<gallery caption="The photography of Sc target mounted in 4” magnetron (PC3 Src1). "widths="400px" heights="500px" perrow="2">
<gallery caption="The photography of Sc target mounted in 4” magnetron (PC3 Src1). "widths="400px" heights="500px" perrow="2">
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==X-ray Reflectivity (XRR)==
==X-ray Reflectivity (XRR)==
[[Specific Process Knowledge/Characterization/XRD/XRD_SmartLab|X-ray Reflectivity]] analysis of ScN samples have been performed to investigate the thicknesses, roughness, and density profiles.
The scans has been obtained using Rigaku XRD SmartLab equipment. The voltage and current settings for the Cu X-ray tube were standard  40kV and 30mA. The incident optics contained a IPS (incident parallel slit) adaptor with 5 &deg; Soller slit. Other slits: IS=0.05mm RS1=0.05mm and RS2=0.075mm. Step size: 0.01 and measurement time - 5s for each point. Fitting procesure was performed using commercial GlobalFit software assuming the model based on Si  substrate  followed by Sc-Si transition layer for better fit, followed by the main ScN film with thin oxides and moisture surfaces. The results are summarized in a tables below.


<gallery caption="X-ray reflectivity scans of ScN thin films (PC3 Src1). " widths="450px" heights="400px" perrow="3">
<gallery caption="X-ray reflectivity scans of ScN thin films (PC3 Src1). " widths="450px" heights="400px" perrow="3">
image:eves_XRR_ScN_3mTorr_1000s_200W_PC3_Src1_RF_ext_20231013.png|ScN thin film XRR. Power: 200W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (95.20 mm).
image:eves_XRR_ScN_3mTorr_1000s_200W_PC3_Src1_RF_ext_20231013.png|ScN thin film XRR. Power: 200W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (95.20 mm).
image:eves_XRR_ScN_3mTorr_1000s_150W_PC3_Src1_RF_ext_20231013.png|ScN thin film XRR. Power: 200W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (95.20 mm).
image:eves_XRR_ScN_3mTorr_1000s_150W_PC3_Src1_RF_ext_20231013.png|ScN thin film XRR. Power: 150W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (95.20 mm).
image:eves_XRR_ScN_3mTorr_1000s_100W_PC3_Src1_RF_ext_20231013.png|ScN thin film XRR. Power: 200W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (95.20 mm).
image:eves_XRR_ScN_3mTorr_1000s_100W_PC3_Src1_RF_ext_20231013.png|ScN thin film XRR. Power: 100W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (95.20 mm).
</gallery>
</gallery>


<gallery caption="X-ray reflectivity scans of ScN thin films (PC3 Src1). " widths="450px" heights="400px" perrow="3">
<gallery caption="X-ray reflectivity scans of ScN thin films (PC3 Src1). " widths="450px" heights="400px" perrow="3">
image:eves_XRR_ScN_3mTorr_1000s_200W_PC3_Src1_RF_home_20231013.png|ScN thin film XRR. Power: 200W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (00.00 mm).
image:eves_XRR_ScN_3mTorr_1000s_200W_PC3_Src1_RF_home_20231013.png|ScN thin film XRR. Power: 200W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
image:eves_XRR_ScN_3mTorr_1000s_150W_PC3_Src1_RF_home_20231013.png|ScN thin film XRR. Power: 200W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (00.00 mm).
image:eves_XRR_ScN_3mTorr_1000s_150W_PC3_Src1_RF_home_20231013.png|ScN thin film XRR. Power: 150W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
image:eves_XRR_ScN_3mTorr_1000s_100W_PC3_Src1_RF_home_20231013.png|ScN thin film XRR. Power: 200W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (00.00 mm).
image:eves_XRR_ScN_3mTorr_1000s_100W_PC3_Src1_RF_home_20231013.png|ScN thin film XRR. Power: 100W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
</gallery>
</gallery>


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|-  
|-  
|<b>150W, 3mTorr, 1050s</b>   
|<b>150W, 3mTorr, 1000s</b>   
|0.63
|0.63
|0.67
|0.67
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|-  
|-  
|<b>150W, 3mTorr, 1050s</b>   
|<b>150W, 3mTorr, 1000s</b>   
|1.29
|1.29
|1.17
|1.17
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<br clear="all" />
<br clear="all" />


==X-ray Photoelectron Spectroscopy==
==X-ray Photoelectron Spectroscopy==
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image:eves_XPS_ScN_PC3_Src1_RF_Sc_3s_fit_2031019.png|<b>Sc 3s</b> signal with fitted functions. Useful for stoichiometry calculation, due to the profile simplicity. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_Sc_3s_fit_2031019.png|<b>Sc 3s</b> signal with fitted functions. Useful for stoichiometry calculation, due to the profile simplicity. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_O_s1_fit_2031019.png|<b>O 1s</b> signal with fitted functions. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_O_s1_fit_2031019.png|<b>O 1s</b> signal with fitted functions. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_Sc2p_and_N1s_fit_2031019.png|<b>Sc 2p</b> and <b>N 1s </b> (in yellow) signals with fitted functions. Less useful for stoichiometry calculation, due to the profile complexity. N1s is dangerously close to Sc 2p, and need to be deconvolved. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_Sc2p_and_N1s_fit_2031019.png|<b>Sc 2p</b> and <b>N 1s</b> (in yellow) signals with fitted functions. Less useful for stoichiometry calculation, due to the profile complexity. N1s is dangerously close to Sc 2p, and need to be deconvolved. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_N_s1_fit_2031019_new.png|<b>N 1s </b> (in yellow) signal with fitted functions, where <b>Sc 2p</b> is also present (grey fitted area). Difficult for stoichiometry calculation, due to the profile complexity. N1s is dangerously close to Sc 2p, and need to be deconvolved. However, there are no other electronic states of nitrogen that can be used in XPS, so the deconvolution approach is the only option. The film has been etched for 160s with Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_N_s1_fit_2031019_new.png|<b>N 1s</b> (in yellow) signal with fitted functions, where <b>Sc 2p</b> is also present (grey fitted area). Difficult for stoichiometry calculation, due to the profile complexity. N1s is dangerously close to Sc 2p, and need to be deconvolved. However, there are no other electronic states of nitrogen that can be used in XPS, so the deconvolution approach is the only option. The film has been etched for 160s with Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
</gallery>
</gallery>


<gallery caption="X-ray reflectivity scans of Sc thin films (PC3 Src1). " widths="450px" heights="400px" perrow="3">
<gallery caption="X-ray Photoelectron Spectroscopy of ScN thin films (PC3 Src1). High resolution scans during the Ar ion etch (depth-profiles)." widths="450px" heights="400px" perrow="3">
image:eves_XPS_ScN_PC3_Src1_RF_Sc2p_and_N1s_2031019.png|Sc thin film XRR. Power: 200W, Deposition time: 500s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (95.20 mm).
image:eves_XPS_ScN_PC3_Src1_RF_Sc2p_and_N1s_2031019.png|<b>Sc 2p</b> and<b>N 1s</b> signals. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
image:eves_XPS_ScN_PC3_Src1_RF_Sc_3s_2031019.png|Sc thin film XRR. Power: 200W, Deposition time: 750s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (95.20 mm).
image:eves_XPS_ScN_PC3_Src1_RF_Sc_3s_2031019.png|<b>Sc 3s</b> signal. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
image:eves_XPS_ScN_PC3_Src1_RF_O_s1_2031019.png|Sc thin film XRR. Power: 200W, Deposition time: 750s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (95.20 mm).
image:eves_XPS_ScN_PC3_Src1_RF_O_s1_2031019.png|<b>O 1s</b> signal. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
image:eves_XPS_ScN_PC3_Src1_RF_C_s1_2031019.png|Sc thin film XRR. Power: 200W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (95.20 mm).
image:eves_XPS_ScN_PC3_Src1_RF_C_s1_2031019.png|<b>C 1s</b> signal. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
</gallery>
</gallery>


<gallery caption="X-ray reflectivity scans of Sc thin films (PC3 Src1). " widths="450px" heights="400px" perrow="3">
<gallery caption="X-ray Photoelectron Spectroscopy of ScN thin films (PC3 Src1).  2-Dimensional depth profiles." widths="450px" heights="400px" perrow="3">
image:eves_XPS_2D_ScN_Sc2p_and_N1s_PC3_Src1_RF_20231018.png|Sc thin film XRR. Power: 200W, Deposition time: 500s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
image:eves_XPS_2D_ScN_Sc2p_and_N1s_PC3_Src1_RF_20231018.png|2D profile of <b>Sc 2p</b> and <b>N 1s</b> signals. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
image:eves_XPS_2D_ScN_Sc3s_PC3_Src1_RF_20231018.png|Sc thin film XRR. Power: 200W, Deposition time: 500s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
image:eves_XPS_2D_ScN_Sc3s_PC3_Src1_RF_20231018.png|2D profile of <b>Sc 3s</b> signal. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
image:eves_XPS_2D_ScN_O1s_PC3_Src1_RF_20231018.png|Sc thin film XRR. Power: 150W, Deposition time: 750s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
image:eves_XPS_2D_ScN_O1s_PC3_Src1_RF_20231018.png|2D profile of <b>O 1s</b> signal. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
image:eves_XPS_2D_ScN_C1s_PC3_Src1_RF_20231018.png|Sc thin film XRR. Power: 100W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
image:eves_XPS_2D_ScN_C1s_PC3_Src1_RF_20231018.png|2D profile of <b>C 1s</b> signal. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
</gallery>
</gallery>


==Scanning Electron microscopy==
==Scanning Electron Microscopy==


The images below present SEM images of the ScN layers from the top and tilted view.  
The images below present [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy |Scanning Electron Microscopy (SEM)]] images of the ScN layers from the top and tilted view.  


<gallery caption="Scanning Electron Microscopy." widths="480px" heights="400px" perrow="3">
<gallery caption="Scanning Electron Microscopy." widths="480px" heights="400px" perrow="3">
image:eves_SEM_ScN_3mTorr_1000s_200W_PC3_Src1_RF_ext_image1_20231013.png| <b><span style="color: red">ScN</span></b> layer deposited at 200 W RF power, 3mTorr, and 1000s. Gun Z-shift position is "Extended". Top view.
image:eves_SEM_ScN_3mTorr_1000s_200W_PC3_Src1_RF_ext_image1_20231013.png| <b><span style="color: red">ScN</span></b> layer deposited at 200 W RF power, 3mTorr, and 1000s. Gun Z-shift position is "Extended". Top view.
image:eves_SEM_ScN_3mTorr_1000s_200W_PC3_Src1_RF_ext_image2_20231013.png| <b><span style="color: red">ScN</span></b> layer deposited at 200 W RF power, 3mTorr, and 1000s. Gun Z-shift position is "Extended". Tilted view.  
image:eves_SEM_ScN_3mTorr_1000s_200W_PC3_Src1_RF_ext_image2_20231013.png| <b><span style="color: red">ScN</span></b> layer deposited at 200 W RF power, 3mTorr, and 1000s. Gun Z-shift position is "Extended". Tilted view.  
image:eves_SEM_ScN_3mTorr_1000s_200W_PC3_Src1_RF_ext_image3_20231013.png| <b><span style="color: red">ScN</span></b> layer deposited at 200 W RF power, 3mTorr, and 1000s. Gun Z-shift position is "Extended". Tilted view
image:eves_SEM_ScN_3mTorr_1000s_200W_PC3_Src1_RF_ext_image3_20231013.png| <b><span style="color: red">ScN</span></b> layer deposited at 200 W RF power, 3mTorr, and 1000s. Gun Z-shift position is "Extended". Tilted view
</gallery>
</gallery>
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