Jump to content

Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

← Older edit
VisualWikitext
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
No edit summary
Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,569 edits
No edit summary
 
(65 intermediate revisions by 2 users not shown)
Line 1: Line 1:
{| border="2" cellspacing="1" cellpadding="3" align="center"
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch click here]'''
<!--Checked for updates on 30/7-2018 - ok/jmli -->
<!--Checked for updates on 5/10-2020 - ok/jmli -->
<!--Checked for updates on 4/9-2025 - ok/jmli -->
== Development of continuous nanoetch ==
{{Template:Author-jmli1}}
<!--Checked for updates on 2/02-2023 - ok/jmli -->
 
The recipes below have been run on 2" wafers with 30/60/90/120/150 nm lines in zep resist. The wafers were crystalbonded to a 4" oxide carrier leaving only a very small fraction (much less than 1% ) of silicon to be etched. If you intend to etch most of the surface of the wafer to create very small posts or ridges (rather than holes or trenches)
 
The most used one is the nano1.42 recipe - to access the results, click on the bold link in the bottom of the table.
 
 
 
{| border="2" cellspacing="1" cellpadding="3" style="text-align:center;"
!Recipe
!Recipe
!nano1.0
!nano1.0
|-
!nano1.1
!Tool
!nano1.2
|Pegasus
!nano1.3
!nano1.21
!nano1.4
!nano1.41
!nano1.42
!nano1.43
|-
|-
!C<sub>4</sub>F<sub>8</sub> (sccm)
!C<sub>4</sub>F<sub>8</sub> (sccm)
|52
|52
|52
|52
|52
|75
|75
|75
|75
|75
|-
|-
!SF<sub>6</sub> (sccm)
!SF<sub>6</sub> (sccm)
|38
|38
|38
|38
|38
|38
|38
|38
|38
|38
|-
|-
!O<sub>2</sub> (sccm)
!O<sub>2</sub> (sccm)
|0
|0
|0
|0
|0
|0
|0
|0
|0
|0
|-
|-
! Coil power (W)
! Coil power (W)
|800 (forward)
|800 (F)
|600 (F)
|800 (F)
|600 (F)
|800 (F)
|800 (F)
|800 (F)
|800 (F)
|800 (F)  
|-
|-
!Platen power (W)
!Platen power (W)
|50
|50
|50
|50
|40
|50
|50
|75
|40
|30
|-
|-
! Pressure (mtorr)
! Pressure (mtorr)
|4
|4
|4
|4
|4
|4
|4
|4
|4
|4
|-
! Temperature (degs C)
| 10
| 10
| -10
| -10
| -10
| -20
| -20
| -20
| -20
|-
|-
! Process time (s)
! Process time (s)
|120
|120
|120
|120
|120
|120
|120
|120
|120
|120
|-
! colspan="10" align="center"| Etch rates (nm/min)
|-
| Averages||295||228||299||235||183||183||166||160||148
|-
| Std. Dev||36||29||37||20||9||9||9||8||6
|-
! colspan="10" align="center"| Zep etch rate (nm/min)
|-
| || ||172||95||94||69||67||101||65||55
|-
! colspan="10" align="center"| Sidewall angle (degrees)
|-
| Averages||93||94||92||94||91||91||90||90||90
|-
| Std. Dev||1||1||0||1||0||0||1||0||0
|-
! colspan="10" align="center"| CD loss (nm pr edge)
|-
| Averages||-11||-13||-17||-10||-10||-10||-20||-13||-24
|-
| Std. Dev||12||10||11||14||15||15||16||15||21
|-
! colspan="10" align="center"| Bowing (nm)
|-
| Averages||31||42||13||16||6||6||3||-3||0
|-
| Std. Dev||7||6||4||3||2||2||2||3||1
|-
! colspan="10" align="center"| Bottom curvature
|-
|-
! Nominal line width
| Averages||-45||-45||-44||-43||-32||-32||-34||-32||-39
! colspan="8" align="center"| Etched depths (nm)
|-
|-
! 30 nm
| Std. Dev||5||7||4||9||10||10||9||8||9
|
|-
|-
!60 nm
! Images
|
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano10|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano11|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano12|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano13|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano121|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]]
|'''[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142|Images]]'''
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano143|Images]]
|-
|-
!90 nm
|}
|
 
 
 
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano|Etch of nanostructures in silicon on the ICP Metal Etcher]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2|Nanoetch contest: DRIE-Pegasus versus ASE (nano1.42 versus pxnano2)]]
 
== Development of switched nanoetch process ==
 
On the basis of the pxnano2 recipe from the ASE we will try to make a similar Bosch process on the Pegasus.
 
 
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Process parameters'''
|-
|-
!120 nm
! rowspan="2" width="100"| Recipe
|
! rowspan="2" width="20"| Step
! rowspan="2" width="20"| Temp.
! colspan="6" | Deposition step
! colspan="7" | Etch step
! colspan="2" | Process observations
|-
|-
!150 nm
! width="40" | Time
|
! width="40" | Pressure
! width="40" | C<sub>4</sub>F<sub>8</sub>
! width="40" | SF<sub>6</sub>
! width="40" | O<sub>2</sub>
! width="40" | Coil
! width="40" | Time
! width="40" | [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters| Pressure]]
! width="40" | C<sub>4</sub>F<sub>8</sub>
! width="40" | SF<sub>6</sub>
! width="40" | O<sub>2</sub>
! width="40" | Coil
! width="40" | Platen
! width="40" | [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters| Hardware]]
! width="40" | Runs
|-
|-
! Nominal line width
! nanobosch6
! colspan="8" align="center"| Etch rates in trenches (nm/min)
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 40
| 60
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nanobosch6 | Click]]
|-
|-
!30 nm
! nb-1.0
|
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 50
| 50
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.0 | Click]]
|-
|-
!60 nm
! nb-1.1
|
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 50
| 50
| 5
| 350
! 50
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.1 | Click]]
|-
|-
!90 nm
! nb-1.2
|
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 50
| 50
| 5
! 500
| 50
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.2 | Click]]
|-
|-
!120 nm
! barcstrip
|
| A
| 20
|
|
|
|
|
|
| 30
| 4 (3@15)
| 0
| 0
| 40
! 200
| 20
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/barcstrip | Click]]
|-
|-
!150 nm
! nanobosch7
|
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 40
| 60
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nanobosch7 | Click]]
|-
|-
|
 
! colspan="8" align="center"| Etch rates in zep resist (nm/min)
 
|-
|-
! zep
!       <!-- recipe name -->
|
|       <!-- step -->
|      <!-- chiller temperature -->
|      <!-- dep time -->
|      <!-- dep pressure -->
|      <!-- dep C4F8 flow -->
|      <!-- dep SF6 flow -->
|      <!-- dep O2 flow -->
|      <!-- dep coil power -->
|      <!-- etch time -->
|      <!-- etch pressure -->
|      <!-- etch C4F8 flow -->
|      <!-- etch SF6 flow -->
|      <!-- etch O2 flow -->
!      <!-- etch coil power -->
|      <!-- etch platen power -->
| LF+B100      <!-- hardware -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.2 | Click]]
|-
|-
[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch|Images]]
|}
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch"