Specific Process Knowledge/Thin film deposition: Difference between revisions

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[[/Deposition of Silicon|Silicon]] <br/>
[[/Deposition of Silicon|Silicon]] <br/>
[[/Deposition of Germanium|Germanium]] <br/>
[[/Deposition of Germanium|Germanium]] <br/>
[[/DiamondCVD|Diamond]] <br/>


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[[/Deposition of Silicon Nitride|Silicon Nitride]] - ''and oxynitride'' <br/>
[[/Deposition of Silicon Nitride|Silicon Nitride]] - ''and oxynitride'' <br/>
[[/Deposition of Titanium Nitride|Titanium Nitride]] - ''conductive ceramics'' <br/>
[[/Deposition of Titanium Nitride|Titanium Nitride]] - ''conductive ceramics'' <br/>
[[/Deposition of Niobium Titanium Nitride| Niobium Titanium Nitride]] - "superconductor"<br/>
[[/Deposition of Niobium Titanium Nitride| Niobium Titanium Nitride]] - ''superconductors''<br/>
[[/Deposition of Aluminium Nitride| Aluminum Nitride (Al<sub>x</sub>N<sub>y</sub>)]]<br/>
[[/Deposition of Aluminium Nitride| Aluminum Nitride (Al<sub>x</sub>N<sub>y</sub>)]]<br/>
[[/Deposition of Scandium Nitride| Scandium Nitride (Sc<sub>x</sub>N<sub>y</sub>)]]<br/>




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[[/Deposition of Tungsten|Tungsten]]<br/>
[[/Deposition of Tungsten|Tungsten]]<br/>
[[/Deposition of Zinc|Zinc]]<br/>
[[/Deposition of Zinc|Zinc]]<br/>
[[/Deposition of Scandium|Scandium]]<br/>




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[[/Sputter deposition of oxides and other compounds|YSZ]] (Yttrium stabilized zirconia)<br/>
[[/Sputter deposition of oxides and other compounds|YSZ]] (Yttrium stabilized zirconia)<br/>
[[/Gadolinium Cerium Oxide|Gd<sub>0.2</sub>Ce<sub>0.8</sub>O<sub>2</sub> (GCO)]]


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*[[/Wordentec|Wordentec]] - ''E-beam evaporator, sputter and thermal evaporator''
*[[/Wordentec|Wordentec]] - ''E-beam evaporator, sputter and thermal evaporator''
*[[/thermalevaporator|Thermal evaporator]]  
*[[/thermalevaporator|Thermal evaporator]]  
*[[/Temescal|E Beam Evaporator (Temescal)]]
*[[/Temescal|E-Beam Evaporator (Temescal)]]
*[[/10-pocket e-beam evaporator|E-Beam Evaporator (10 pockets)]]
*[[/Sputter coater#Sputter_coater_03_(Cressington)|Sputter coater 03]] - ''Gold sputtering system''
*[[/Sputter coater#Sputter_coater_03_(Cressington)|Sputter coater 03]] - ''Gold sputtering system''
*[[/Sputter coater#Sputter_coater_04_(Agar Scientific)|Sputter coater 04]] - ''Gold sputtering system''
*[[/Sputter coater#Sputter_coater_04_(Agar Scientific)|Sputter coater 04]] - ''Gold sputtering system''
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*[[/PECVD|PECVD]] - ''Plasma Enhanced Chemical Vapor deposition''
*[[/PECVD|PECVD]] - ''Plasma Enhanced Chemical Vapor deposition''
*[[/DiamondCVD|Seki Diamond CVD]] - ''Microwave Plasma CVD for diamond Growth''
<!--*[[/DiamondCVD|Seki Diamond CVD]] - ''Microwave Plasma CVD for diamond Growth''-->
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*[[/ALD Picosun R200|ALD1]] - Atomic Layer Deposition (thermal)
*[[/ALD Picosun R200|ALD1]] - Atomic Layer Deposition (thermal)
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*[[/MVD|MVD]] - ''Molecular Vapor Deposition''
*[[/MVD|MVD]] - ''Molecular Vapor Deposition''
*[[/Electroplating-Ni|Electroplating-Ni]] - ''Electrochemical deposition of nickel''
*Electroplating of Ni, Cu, Au, etc. - ''Ask in the department of Mechanical Engineering''
*Electroplating of Cu, Au, etc. - ''Ask in the department of Mechanical Engineering''
*MOCVD - Epitaxial growth of InP, GaAs and other III-V materials - ''Ask DTU Electro if you are interested: [mailto:esem@dtu.dk Elizaveta Semenova] or [mailto:kryv@dtu.dk Kresten Yvind]''
*MOCVD - Epitaxial growth - ''Ask the department of photonics if you are interested: [mailto:esem@fotonik.dtu.dk Elizaveta Semenova] or [mailto:kryv@fotonok.dtu.dk Kresten Yvind]''
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Latest revision as of 10:43, 29 August 2024

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Unless otherwise stated, this page is written by DTU Nanolab internal


Choose material to deposit

Semiconductors Oxides Nitrides Carbon and Carbides Metals Alloys Transparent conductive oxides Polymers Multilayers

Silicon
Germanium

Aluminium Oxide (Al2O3)
Barium titanate (BaTiO3)
Chromium Oxide (Cr2O3)
Hafnium Oxide (HfO2)
Magnesium Oxide (MgO)
Nickel Oxide (NiO)
Silicon Oxide (SiO2)
Titanium Oxide (TiO2)
Tantalum Oxide (Ta2O5)
Vanadium Oxide (VOx)
Zinc Oxide (ZnO)


Silicon Nitride - and oxynitride
Titanium Nitride - conductive ceramics
Niobium Titanium Nitride - superconductors
Aluminum Nitride (AlxNy)
Scandium Nitride (ScxNy)


Carbon
Silicon Carbide (SiC)
Tantalum carbide (TaCx)


Aluminium
Chromium
Copper
Gold
Iron
Magnesium
Molybdenum
Nickel
Niobium
Palladium
Platinum
Ruthenium
Silver
Tantalum
Tin
Titanium
Tungsten
Zinc
Scandium


AlCu
CuTi
FeMn
MnIr
NbTi
NiFe
NiV alloy
TiW alloy (10%/90% by weight)

And an electroceramic:

YSZ (Yttrium stabilized zirconia)
Gd0.2Ce0.8O2 (GCO)

ITO (Tin doped Indium Oxide)
AZO (Aluminum doped Zinc Oxide)

SU-8
Antistiction coating
Topas
PMMA

CrSi bilayer

Oh no! My material is not on the list! Please contact the Thin Film group if you would like to inquire about a material that is not mentioned here.

Choose deposition equipment

PVD - Physical vapor deposition LPCVD - low pressure chemical vapor deposition PECVD - plasma enhanced chemical vapor deposition ALD - atomic layer deposition Coaters - for polymers Others



  • PECVD - Plasma Enhanced Chemical Vapor deposition
  • ALD1 - Atomic Layer Deposition (thermal)
  • ALD2 (PEALD) - Atomic Layer Deposition (thermal and plasma enhanced)

See the Lithography/Coaters page for coating polymers

  • MVD - Molecular Vapor Deposition
  • Electroplating of Ni, Cu, Au, etc. - Ask in the department of Mechanical Engineering
  • MOCVD - Epitaxial growth of InP, GaAs and other III-V materials - Ask DTU Electro if you are interested: Elizaveta Semenova or Kresten Yvind