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==Overview of characteristics and where to measure it==
==Overview of characteristics and where to measure it==
{| {{table } }
{| {{table } }
|  width="50" align="center" style="background:#f0f0f0;"|  
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|  
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Optical_microscope| Optical Micro- scopes]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_microscope| Optical Micro- scopes]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|SEM (incl. EDX)]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|SEM (incl. EDX)]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|AFM]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|AFM]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/Profiler|Stylus profiler]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/Profiler|Stylus profiler]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Profiler#Optical_Profiler_(Sensofar_S_Neox)|Optical profiler]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Profiler#Optical_Profiler_(Sensofar_S_Neox)|Optical profiler]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Optical_characterization#Filmtek_4000|Filmtek (reflec- tometer)]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_characterization#Filmtek_4000|Filmtek (reflec- tometer)]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|Ellip- someter]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|Ellip- someter]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Thickness stylus]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Thickness stylus]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/XPS|XPS]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XPS|XPS]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/PL_mapper|PL mapper]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/PL_mapper|PL mapper]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/4-Point_Probe|4-point probe]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/4-Point_Probe|4-point probe]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Probe_station|Probe station]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Probe_station|Probe station]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/XRD|XRD]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XRD|XRD]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap|Life time scanner]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap|Life time scanner]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Drop shape analyser]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Drop shape analyser]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Hardness_measurement|Hardness tester]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Hardness_measurement|Hardness tester]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/Particle Scanner Takano|Particle scanner]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/Particle Scanner Takano|Particle scanner]]
|  width="50" align="center" style="background:#f0f0f0;"|'''IR-camera'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|IR-camera
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/MicroSpectroPhotometer (Craic 20/30 PV)|Microspectrophotometer (Craic 20/30 PV)]]'''
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/MicroSpectroPhotometer (Craic 20/30 PV)|Microspectrophotometer (Craic 20/30 PV)]]
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
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|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Carrier density/doping profile  
|align="left"| Carrier density/doping profile  
|||||||||||||||||||||||||||||||||||||x|
|||||||||||||||||||||||||||||||||||||x||


|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Charge carrier life time||||||||||||||||||||||||||||x|||||||||||
|align="left"| Charge carrier life time||||||||||||||||||||||||||||x||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Contact angle hydrophobic/hydrophillic||||||||||||||||||||||||||||||x|||||||||
|align="left"| Contact angle hydrophobic/hydrophillic||||||||||||||||||||||||||||||x||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Crystallinity||||||||||||||||||||||||||x||||||||||||
|align="left"| Crystallinity||||||||||||||||||||||||||x||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Deposition uniformity||||||||||x||x||x|||||||||||||||||||||||||
|align="left"| Deposition uniformity||||||||||x||x||x||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Dimensions(in plane)]]||x||x||(x)||(x)||x||||||||||||||||||||||||||||x
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Dimensions(in plane)]]||x||x||(x)||(x)||x||||||||||||||||||||||||||||||x
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Topographic_measurement|Dimensions(height)/Topography]]||(x)||(x)||x||x||x|||||||||||||||||||||||||||||
|align="left"|[[Specific_Process_Knowledge/Characterization/Topographic_measurement|Dimensions(height)/Topography]]||(x)||(x)||x||x||x||||||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Electrical conductivity||||||||||||||||||||||||x|||||||||||||||
|align="left"| Electrical conductivity||||||||||||||||||||||||x||||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x  4)||||||x  4)|||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x  4)||||||x  4)||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x  7)|||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x  7)||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x||||||||||||||||||||||||||||x
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x||||||||||||||||||||||||||||||x
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Hardness_measurement|Material Hardness]]||||||||||||||||||||||||||||||||x|||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Hardness_measurement|Material Hardness]]||||||||||||||||||||||||||||||||x||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Band gap||||||||||||||x||||x||x|||||||||||||||||||
|align="left"| Band gap||||||||||||||x||||x||x||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Particles||x||x||x||||||||||||||||||||||||||||x||||x
|align="left"| Particles||x||x||x||||||||||||||||||||||||||||x||||||x
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Phase changes|||||||||||||||||||||||||||||||||||||||
|align="left"| Phase changes||||||||||||||||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Reflectivity||||||||||||x||x||||||x 6)||||||||||||||||||x
|align="left"| Reflectivity||||||||||||x||x||||||x 6)||||||||||||||||||||x
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Refractive index]]||||||||||||x||x|||||||||||||||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Refractive index]]||||||||||||x||x||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Resistivity||||||||||||||||||||||x|||||||||||||||||
|align="left"| Resistivity||||||||||||||||||||||x||||||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Step coverage||x  1)||x  1)|||||||||||||||||||||||||||||||||||
|align="left"| Step coverage||x  1)||x  1)||||||||||||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Surface roughness||||||x||x||x||||||||||||||||x|||||||||||||
|align="left"| Surface roughness||||||x||x||x||||||||||||||||x||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Thermal conductivity|||||||||||||||||||||||||||||||||||||||
|align="left"| Thermal conductivity||||||||||||||||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x  1)||x  1)||x  2)||x  2)||x  ||x||x||||||x 5)||x  3)||||x|||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x  1)||x  1)||x  2)||x  2)||x  ||x||x||||||x 5)||x  3)||||x||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Voids in wafer bonding||x||||||||||||||||||x||||||||||||||||x|||
|align="left"| Voids in wafer bonding||x||||||||||||||||||x||||||||||||||||x||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x  1)||x  1)||||||||||||x|||||||||||||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x  1)||x  1)||||||||||||x||||||||||||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Work function||||||||||||||||||x|||||||||||||||||||||
|align="left"| Work function||||||||||||||||||x||||||||||||||||||||||
|-  
|-  
|}
|}


# Using the cross section method
# Using the cross section method
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== Choose characterization topic ==
== Choose characterization topic ==
*[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|Carrier density (doping) profiler]]
*[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]]
*[[/Element analysis|Element analysis]]
*[[/Element analysis|Element analysis]]
*[[/Measurement of film thickness and optical constants|Measurement of film thickness and optical constants]]
*[[/Measurement of film thickness and optical constants|Film thickness and optical constants]]
*[[/Hardness measurement|Hardness measurement]]
*[[/PL mapper|Photoluminescence mapping]]
*[[/PL mapper|Photoluminescence mapping]]
*[[/Four-Point_Probe|Four-Point Probe (Resistivity measurement)]] <!-- [[/Resistivity measurement|Resistivity measurement]] -->
*[[/Sample imaging|Sample imaging]]
*[[/Sample imaging|Sample imaging]]
*[[/Sample preparation|Sample preparation for inspection]]
*[[/Sample preparation|Sample preparation for inspection]]
*[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]]
*[[/Stress measurement|Stress measurement]]
*[[/Stress measurement|Stress measurement]]
*[[/Hardness measurement|Hardness measurement]]
*[[/Thickness Measurer|Wafer thickness measurement]]
*[[/Thickness Measurer|Wafer thickness measurement]]
*[[/Topographic measurement|Topographic measurement]]
*[[/Topographic measurement|Topographic measurement]]
*[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]]
*[[/Four-Point_Probe|Four-Point Probe (Resistivity measurement)]] <!-- [[/Resistivity measurement|Resistivity measurement]] -->
*[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|Carrier density (doping) profiler]]
*[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]]
*[[Specific Process Knowledge/Characterization/XRD|X-ray diffraction]]  
*[[Specific Process Knowledge/Characterization/XRD|X-ray diffraction]]  
<!--
<!--
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===XRD===
===XRD===
*[[/XRD|General page on XRD]], page describing general info relevant to both our XRD's
*[[/XRD/XRD Powder|XRD Powder]], tabletop XRD for Bregg-Brentano measurements of powders
*[[/XRD/XRD Powder|XRD Powder]], tabletop XRD for Bregg-Brentano measurements of powders
*[[/XRD/XRD SmartLab|XRD SmartLab]], advanced multipurpose instrument in the cleanroom
*[[/XRD/XRD SmartLab|XRD SmartLab]], advanced multipurpose instrument in the cleanroom
*[[/XRD/XRD SmartLab 9kW Rotating Anode|XRD SmartLab 9kW Rotating Anode]] multipurpose system outside the cleanroom


===Various===
===Various===

Latest revision as of 10:52, 9 October 2024

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Unless otherwise stated, this page is written by DTU Nanolab internal

Overview of characteristics and where to measure it

Optical Micro- scopes SEM (incl. EDX) AFM Stylus profiler Optical profiler Filmtek (reflec- tometer) Ellip- someter Thickness stylus XPS PL mapper 4-point probe Probe station XRD Life time scanner Drop shape analyser Hardness tester Particle scanner IR-camera III-V ECV-profiler Microspectrophotometer (Craic 20/30 PV)
Breakdown voltage
Carrier density/doping profile x
Charge carrier life time x
Contact angle hydrophobic/hydrophillic x
Crystallinity x
Deposition uniformity x x x
Dimensions(in plane) x x (x) (x) x x
Dimensions(height)/Topography (x) (x) x x x
Electrical conductivity x
Element analysis x x x 4) x 4)
Film stress x x 7)
Imaging x x x x x
Material Hardness x
Band gap x x x
Particles x x x x x
Phase changes
Reflectivity x x x 6) x
Refractive index x x
Resistivity x
Step coverage x 1) x 1)
Surface roughness x x x x
Thermal conductivity
Thin film thickness x 1) x 1) x 2) x 2) x x x x 5) x 3) x
Voids in wafer bonding x x x
Wafer thickness x 1) x 1) x
Work function x



  1. Using the cross section method
  2. Using the create step method
  3. With known resistivity
  4. Composition information for crystalline materials
  5. Only single layer
  6. Good for characterization of VCSEL structures and DBR mirrors
  7. Only for crystalline films

Choose characterization topic

Choose equipment

AFM

Electrical measurements

Element analysis

Optical and stylus profilers

Optical microscopes

Optical characterization

SEMs at DTU Nanolab - building 307/314

SEM's in building 346

TEMs at DTU Nanolab - building 307/314

XRD

Various

Decommissioned equipment

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