Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions

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 '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography click here]'''
-[[Category: Equipment |Lithography exposure]]
-[[Category: Lithography|Exposure]]
+Content and illustration by Thomas Pedersen, DTU Nanolab unless otherwise noted.
+[[Category:Equipment|Lithography exposure]]
+[[Category:Lithography|Exposure]]
 <div class="keywords" style="display:none;">ebl e-beam writer e-beamwriter ebeamwriter e-beamlithography</div>
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 =Quick links=
+[[Specific Process Knowledge/Lithography/Resist#E-beam Resist|E-beam Resist]]
+[[Specific Process Knowledge/Lithography/EBeamLithography/JEOLRequest|Exposure slot request]]
 [[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL 9500 User Guide|JEOL 9500 User Guide]]
@@ Line 17: / Line 24: @@
 [[Specific_Process_Knowledge/Lithography/EBeamLithography/BEAMER|Beamer guide]]
-[[Specific_Process_Knowledge/Lithography/EBeamLithography/TRACER|Tracer guide]]
+[[Specific Process Knowledge/Lithography/EBeamLithography/EBLProcessExamples|EBL process examples]]
-[[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL 9500 trouble shooting|JEOL 9500 trouble shooting guide]]
+[[Specific_Process_Knowledge/Lithography/EBeamLithography/Dose_Testing|Dose testing setups for JEOL 9500]]
 = Introduction to E-beam lithography at DTU Nanolab =
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 Compared to UV lithography EBL is somewhat more complicated and in general a significantly longer process. Writing time (per area) is much higher and thus EBL is only adviseable for structures with Critical Dimensions (CD) below 1 µm. For CD equal to or higher than 1 µm please consider our '''[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_02 | Maskless Aligner tools.]]'''
-For more information and specific workflows on either tool, please refer to their respective pages; [[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ|JEOL JBX-9500FSZ]] or [[Specific_Process_Knowledge/Lithography/EBeamLithography/eLINE|Raith eLINE Plus]].
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 Please request training in E-Beam lithography by sending an email with your process flow to [mailto:training@nanolab.dtu.dk training@nanolab.dtu.dk].
+==EBL staff at DTU Nanolab==
+Questions related to E-beam lithography should be directed to the EBL staff.
+{| class="wikitable"
+|-
+|[[File:thope.png|150px|link=]]
+||[[File:pxshi.png|150px|link=]]
+||[[File:elelop.png|150px|link=]]
+||[[File:meenadh.png|150px|link=]]
+||[[File:rawta.png|150px|link=]]
+|-
+|[mailto:thope@dtu.dk Thomas Pedersen]
+JEOL 9500 & Raith E-Line
+|| [mailto:pxshi@dtu.dk Peixiong Shi]
+JEOL 9500
+|| [mailto:elelop@dtu.dk Elena Lopez Aymerich]
+JEOL 9500
+|| [mailto:meenadh@dtu.dk Meena Dhankhar]
+Raith E-Line
+|| [mailto:rawta@dtu.dk Rawa Tanta]
+JEOL 9500 & Raith E-Line
+|}
 == JEOL 9500 and Raith eLine Plus specifications ==
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 |style="background:LightGrey; color:black"|Scan speed
-|style="background:WhiteSmoke; color:black"|100 MHz
+|style="background:WhiteSmoke; color:black"|200 MHz
 |style="background:WhiteSmoke; color:black"|20 MHz
 |-
@@ Line 87: / Line 114: @@
 |style="background:LightGrey; color:black"|Minimum dwell time
-|style="background:WhiteSmoke; color:black"| 10 ns
+|style="background:WhiteSmoke; color:black"| 5 ns
 |style="background:WhiteSmoke; color:black"| 50 ns
 |-
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 |-
 | colspan="1" style="text-align:center;|
-Exposure and development result of a positive resist (left) and a negative resist (right). Illustration: Thomas Pedersen.
+Exposure and development result of a positive resist (left) and a negative resist (right).
 |}
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 |-
 | colspan="1" style="text-align:center;|
-Example feature filled with beam shots at one times beam diameter (left) and half beam diameter (right). Illustration: Thomas Pedersen.
+Example feature filled with beam shots at one times beam diameter (left) and half beam diameter (right).
 |}
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 |-
 | colspan="2" style="text-align:center;|
-Shot time as calculated by the JEOL system (left) and Raith eLine system (right). Illustration: Thomas Pedersen.
+Shot time as calculated by the JEOL system (left) and Raith eLine system (right).
 |}
+==Exposure time==
+E-beam exposure is a serial writing process and the writing time (t) will scale with dose (D), area (A) and beam current (I) as:
+t = D*A/I
+It is thus essential to find the right balance between the area that needs to be defined and a beam current that will provide sufficient pattern fidelity and quality. During pattern writing the tool will also use time on cyclic calibration and stage movement as defined by the job path and pattern layout. [https://labmanager.dtu.dk/function.php?module=Machine&view=jeol_writing_time The exposure time can be estimated based here.]
 = Exposure information =
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 Since substrate preparation and development processes are (nearly) identical for the JEOL and Raith eLine systems they are described in common below. Pattern preparation, job preparation and job execution are fairly different between the two tools and hence these steps are described on the specific tool pages.
-== Substrate preparation ==
+== Substrate preparation and resist information==
-Substrates must be prepared for EBL by applying an e-beam sensitive resist and possibly a discharge layer. Please consult the [[Specific Process Knowledge/Lithography/EBeamLithography/EBLsubstratePrep| EBL substrate preparation guide]] on how to prepare your substrate.
+Substrates must be prepared for EBL by applying an e-beam sensitive resist and possibly a discharge layer. Please consult the EBL substrate preparation guide on how to prepare your substrate and to find resist information.
+*[[Specific Process Knowledge/Lithography/EBeamLithography/EBLsubstratePrep| EBL substrate preparation guide]]
 == Pattern preparation ==
 Pattern preparation is somewhat different depending on if a pattern is exposed on JEOL 9500 or Raith eLine Plus. Please refer to the correct pattern preparation section below.
-[[Specific Process Knowledge/Lithography/EBeamLithography/JEOLPatternPreparation|Pattern preparation for exposure on JEOL 9500.]]
+*[[Specific Process Knowledge/Lithography/EBeamLithography/JEOLPatternPreparation|Pattern preparation for exposure on JEOL 9500]]
-[[Specific Process Knowledge/Lithography/EBeamLithography/RaithPatternPreparation|Pattern preparation for exposure on Raith eLine Plus.]]
+*[[Specific Process Knowledge/Lithography/EBeamLithography/RaithPatternPreparation|Pattern preparation for exposure on Raith eLine Plus]]
 == Job preparation ==
 Job preparation is also different depending on if a pattern is exposed on JEOL 9500 or Raith eLine Plus. Please refer to the correct job preparation section below.
-[[Specific Process Knowledge/Lithography/EBeamLithography/JEOLJobPreparation|Job preparation for exposure on JEOL 9500.]]
+*[[Specific Process Knowledge/Lithography/EBeamLithography/JEOLJobPreparation|Job preparation for exposure on JEOL 9500]]
-[[Specific Process Knowledge/Lithography/EBeamLithography/RaithJobPreparation|Job preparation for exposure on Raith eLine Plus.]]
+*[[Specific Process Knowledge/Lithography/EBeamLithography/RaithJobPreparation|Job preparation for exposure on Raith eLine Plus]]
 == Job execution ==
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 == Development ==
-AR 600-546 and ZED N-50 developers are available in a semi automatic puddle developer [[Specific_Process_Knowledge/Lithography/Development#Developer:_E-beam|Developer: E-beam]] in E-4, mainly intended for development of AR-P 6200 and ZEP 520A. It has automatic recipes for puddle development cycles for 10, 30 and 60 seconds of either of the two developers, each finishing off with an IPA rinse and drying cycle. The system can handle chips, 2", 4" and 6" wafers.
+AR 600-50 and ZED N-50 developers are available in a semi automatic puddle developer [[Specific_Process_Knowledge/Lithography/Development#Developer:_E-beam_02|Developer: E-beam 02]] in E-4, mainly intended for development of AR-P 6200 and ZEP 520A. It has automatic recipes for puddle development cycles for 10, 30 and 60 seconds of either of the two developers, each finishing off with an IPA rinse and drying cycle. The system can handle chips, 2", 4", 6" and 8" wafers.
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 After image acquisition the images can be semi automatically processed with ProSEM to determine feature sizes. For large image sets the software can generate an Excel sheet with various dimension outputs.
+=EBL process examples=
+Process examples and results can be found [[Specific Process Knowledge/Lithography/EBeamLithography/EBLProcessExamples|on this page.]]
 = Literature on E-beam Lithography =