Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions
| (5 intermediate revisions by the same user not shown) | |||
| Line 7: | Line 7: | ||
==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching== | ==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching== | ||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
!Parameter | !Parameter | ||
| Line 87: | Line 86: | ||
File:SRN etch uniformity DOE2_Post_II_21.jpg | File:SRN etch uniformity DOE2_Post_II_21.jpg | ||
</gallery> | </gallery> | ||
====Adding electromagnets (EM) to see if that could improve the uniformity==== | |||
Recipe used: SiO2_res_10<br> | |||
[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]] | |||
[[File:Contour Plot SNR_a12 etch rate.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:10/0. The outer coil just seems to make it worse. Average etch rate: 114 nm/min +-60% ]] | |||