Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions
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[[Category: Equipment |Etch DRIE]] | [[Category: Equipment |Etch DRIE]] | ||
[[Category: Etch (Dry) Equipment|DRIE]] | [[Category: Etch (Dry) Equipment|DRIE]] | ||
<br> {{CC- | <br> {{CC-bghe1}} | ||
==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching== | ==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching== | ||
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!Parameter | !Parameter | ||
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{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
! | !Measured results | ||
!'''SiO2_res_10''' | !'''SiO2_res_10''' | ||
!'''DOE2/Post_II_21''' | !'''DOE2/Post_II_21''' | ||
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File:SRN etch uniformity DOE2_Post_II_21.jpg | File:SRN etch uniformity DOE2_Post_II_21.jpg | ||
</gallery> | </gallery> | ||
====Adding electromagnets (EM) to see if that could improve the uniformity==== | |||
Recipe used: SiO2_res_10<br> | |||
[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]] | |||
[[File:Contour Plot SNR_a12 etch rate.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:10/0. The outer coil just seems to make it worse. Average etch rate: 114 nm/min +-60% ]] | |||