Specific Process Knowledge/Thin film deposition/Deposition of Platinum: Difference between revisions

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'''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Platinum click here]'''
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<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
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! Pre-clean
! Pre-clean


|Ar ion source
 
|Ar ion etch (only in E-beam evaporator Temescal)
|none
|none
|RF Ar clean
|RF Ar clean
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|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Allowed materials
 
! Allowed materials
|
Almost any that does not degas at your intended substrate temperature. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
|
|
*Silicon oxide
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
|
* Silicon
*Almost any that does not degas.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
 
|
|
* Silicon
*Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* Silicon oxide
* Silicon nitride
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
* Carbon
 
| Almost any that does not outgas


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|
| Pt tends to exhibit tensile stress, see section on [[Specific Process Knowledge/Characterization/Stress measurement|stress in thin films]].
|
|
|  
|  
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'''*''' ''If depositing a total of more than 600 nm, please write to metal@danchip.dtu.dk well in advance to ensure that enough material is present.''
'''*''' ''If depositing a total of more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.''

Latest revision as of 12:42, 22 January 2024

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal


Platinum deposition

Platinum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.


E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) E-beam evaporation (Wordentec) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Pt E-beam deposition of Pt Sputter deposition of Pt Sputter deposition of Pt
Pre-clean


Ar ion etch (only in E-beam evaporator Temescal) none RF Ar clean RF Ar clean
Layer thickness 10Å - 600nm* 10Å - 600nm* 10Å - 600nm* 10Å - ? discuss with staff
Deposition rate 0.5Å/s to 10Å/s 0.5Å/s to 10Å/s up to 3.74 Å/s not known yet, probably similar to 'old' Lesker system
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller wafers and pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 1x4" wafer or
  • 1x6" wafer
  • smaller pieces
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed materials

Almost any that does not degas at your intended substrate temperature. See the cross-contamination sheet.

Almost any that does not degas. See the cross-contamination sheet.

  • Almost any that does not degas.
  • Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for PC1 and PC3
Comment Pt tends to exhibit tensile stress, see section on stress in thin films.

* If depositing a total of more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.

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