Specific Process Knowledge/Thin film deposition/Lesker: Difference between revisions
Appearance
No edit summary |
No edit summary |
||
| (10 intermediate revisions by 2 users not shown) | |||
| Line 123: | Line 123: | ||
|- | |- | ||
|Au|| 0,125"|| 99,999% || 314 || 20 | |Au|| 0,125"|| 99,999% || 314 || 20 | ||
|- | |- | ||
|Cr|| 0,125"|| 99,95% || 251 || 20 | |Cr|| 0,125"|| 99,95% || 251 || 20 | ||
| Line 161: | Line 159: | ||
|- | |- | ||
|Al/Cu99,5/0,5%|| 0,250"|| 99,99% || 314 || 20 | |Al/Cu99,5/0,5%|| 0,250"|| 99,99% || 314 || 20 | ||
|- | |- | ||
|Cr2O3|| 0,125" + Cu backing plate|| 99,8% || 63 || 0.5 | |Cr2O3|| 0,125" + Cu backing plate|| 99,8% || 63 || 0.5 | ||
| Line 181: | Line 173: | ||
|- | |- | ||
|Ni/Co50/50%|| 0,0625"|| 99,95% || 126 || 20 | |Ni/Co50/50%|| 0,0625"|| 99,95% || 126 || 20 | ||
|- | |- | ||
|Ni/Fe 80/20%|| 0.125"|| 99,95% || 126 || 20 | |Ni/Fe 80/20%|| 0.125"|| 99,95% || 126 || 20 | ||
| Line 313: | Line 303: | ||
|style=background:WhiteSmoke; color:black|'''magn.''' | |style=background:WhiteSmoke; color:black|'''magn.''' | ||
|style=background:WhiteSmoke; color:black|'''Relative depostion rate''' | |style=background:WhiteSmoke; color:black|'''Relative depostion rate''' | ||
|- | |- | ||
|Cr||Chromium||Med||0.87 | |Cr||Chromium||Med||0.87 | ||
| Line 326: | Line 314: | ||
|Ni80Fe20||Permalloy||High||0.80 | |Ni80Fe20||Permalloy||High||0.80 | ||
|} | |} | ||
==Overview of the performance of Sputter-System(Lesker) and some process related parameters== | ==Overview of the performance of Sputter-System(Lesker) and some process related parameters== | ||
| Line 333: | Line 320: | ||
|- | |- | ||
!style="background:silver; color:black;" align="left"|Purpose | !style="background:silver; color:black;" align="left"|Purpose | ||
|style="background:LightGrey; color:black"|Deposition of | |style="background:LightGrey; color:black"|Deposition of various materials ||style="background:WhiteSmoke; color:black"| | ||
* | * Metals including alloys and magnetic materials | ||
* Dielectrica including silica and alumina. | |||
* Semiconductors including silicon | |||
* See tables above and ask staff if there is a material you would like to deposit which you do not see listed. | |||
|- | |- | ||
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance | ||
| Line 348: | Line 338: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* usually room temp | * usually room temp | ||
* | * We used to have sample heating to to more than 400°. However, this is not possible at the moment. | ||
* For sputtering with sample heating, please see [[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3) ]] | |||
|- | |- | ||
|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||
| Line 357: | Line 348: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Ar | *Ar | ||
*N< | *N<sub>2</sub> | ||
*O< | *O<sub>2</sub> | ||
*2%O< | *2 % O<sub>2</sub> in Ar | ||
* mixtures of the above | * mixtures of the above | ||
|- | |- | ||
| Line 372: | Line 363: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon wafers | *Silicon wafers | ||
*and almost any other | *and almost any other as long as it does not degas. | ||
*See cross-contamination sheet [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=244] | |||
|- | |- | ||
| style="background:LightGrey; color:black"|Material allowed on the substrate | | style="background:LightGrey; color:black"|Material allowed on the substrate | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*almost any | *almost any as long as it does not degas. | ||
|- | |- | ||
|} | |} | ||
==Maximum Power Calculation== | |||
* <math>PD</math> - Power density (fundamental constant given by a supplier) | |||
* <math>P(W)</math> - Power (W) from power supply | |||
* <math>A(inch^2)</math> - Area of the target | |||
------------------------------------------------------------------------------------------------------------ | |||
<math> PD=\frac{P(W)}{A(inch^2)}</math> ⇒ <math>P(W)=PD\cdot A(inch^2)=PD\cdot\frac{\pi d^2}{4}</math> | |||
<ul> | |||
<li><p> <b><span style="color: green">d=2" (2-inch target)</span></b> <math>P(W)=3.14\cdot PD</math> </p></li> | |||
<li><p> <b><span style="color: green">d=3" (3-inch target)</span></b> <math>P(W)=7.065\cdot PD</math> </p></li> | |||
<li><p> <b><span style="color: green">d=4" (4-inch target)</span></b> <math>P(W)=12.56\cdot PD</math> </p></li> | |||
<li><p> <b><span style="color: green">d=6" (6-inch target)</span></b> <math>P(W)=28.26\cdot PD</math> </p></li> | |||
</ul> | |||
-------------------------------------------------- | |||
Value of the <math>PD</math> is material dependent and can be found on KJLC homepage | |||