Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask: Difference between revisions
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| ''' 1 µm holes''' || [[File:bitmapddddd.jpg|300px]] [[File:holes.tif.jpg|300px]] || Visible that after the 90 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~16nm of it). | | ''' 1 µm holes''' || [[File:bitmapddddd.jpg|300px]] [[File:holes.tif.jpg|300px]] || Visible that after the 90 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~16nm of it). | ||
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| '''200nm nanoholes''' || [[File:nanoHoles 0g 02 v3.jpg|300px]] [[File:nanoHoles 0g 05 v2.jpg|300px]] || Visible that after the | | '''200nm nanoholes''' || [[File:nanoHoles 0g 02 v3.jpg|300px]] [[File:nanoHoles 0g 05 v2.jpg|300px]] || Visible that after the 260 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~20nm of it). Resist visible on top of the mask since it was etched during the ORE process. | ||
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==Previous work on Peg2== | |||
*[https://run.unl.pt/bitstream/10362/152030/1/Farinha_2022.pdf SF6/O2 Plasma Etching: Optimizing the CORE process and going into 3D Engineering_November22 by Maria Farinha@DTU Nanolab] | |||