Specific Process Knowledge/Etch/KOH Etch/ProcessInfo: Difference between revisions
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*[http://labmanager.dtu.dk/d4Show.php?id=5476&mach=407 The QC procedure for Si Etch: 03]<br> | *[http://labmanager.dtu.dk/d4Show.php?id=5476&mach=407 The QC procedure for Si Etch: 03]<br> | ||
{| {{table}} | {| {{table}} | ||
| align="center" | | | align="center" | | ||
{| border="1" cellspacing="1" cellpadding="2" align="center" style="width:200px" | {| border="1" cellspacing="1" cellpadding="2" align="center" style="width:200px" | ||
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|Time | |Time | ||
|90 min | |90 min | ||
|- | |- | ||
|Substrate | |Substrate | ||
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<math>X=\frac{(Y\cdot 1000g)}{(1.509g/ml\cdot(0.5-Y))}</math> | <math>X=\frac{(Y\cdot 1000g)}{(1.509g/ml\cdot(0.5-Y))}</math> | ||
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<math>W_b = W_o - 2d cot(54.7^o) = W_o - \sqrt{2} d</math> | <math>W_b = W_o - 2d cot(54.7^o) = W_o - \sqrt{2} d</math> | ||