Specific Process Knowledge/Back-end processing/Hot Embosser

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Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

Hot Embosser

The Hot Embosser at DTU Nanolab is a hydraulic machine, a Collin Press P300 SV. It is located in the basement of building 346 (room 901). The device is typically made using variety of different polymer foils, as well as Graphene. A master pattern, called a shim, is usually fabricated in Si, but can also be fabricated in metals as well as other polymers. It is placed inside the machine between the pressure hot plates, and using a combination of heat and pressure patterned on to the foil. It is possible to replicate both small and large 2½D structures relatively fast.

Location of the machine is the basement of building 346 room 901, photo: DTU Nanolab

The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:

Hot Embosser in LabManager

Process information

At the moment there are no set processes for the machine. Each material demands different process parameters, depending on the type of process you are running. For development of process that fits your needs contact for the machine responsible personel, and we will assist you in designing the optimal process

Equipment performance and process related parameters

Equipment		Equipment 1
Purpose		Hot Embossing Chip Bonding
Performance	Press Plates Temperature	Temperatures close to the glass transition temperature of the polymer give the best results when it comes to pattern replication. Temperatures that are 5 degrees above the glass transition temperature of the polymer give the best results when bonding lids on top of chips. If bonding chip to lid, where the polymers are of different types/grades this rule will not apply
	Press Plates Pressure	Pressures vary depending on the process. Typically when bonding chips lower pressures are preferred, when imprinting or embossing higher pressures give the best results
Process parameter range	Temperature	0-285 degrees Celsius
	Pressure	1.5-300 kN
Substrates	Batch size	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers # 200 mm wafers # odd sized samples, contact for the machine responsible personel
	Allowed materials	PMMA TOPAS 5013-L10 TOPAS 8007 PC PP PCL SU8 Graphene Metals (Al,Ni....) For other materials contact for machine responsible personel