Specific Process Knowledge/Etch/III-V RIE: Difference between revisions
Appearance
No edit summary |
|||
| (4 intermediate revisions by 3 users not shown) | |||
| Line 3: | Line 3: | ||
'''''Unless otherwise stated, this page is written by DTU Nanolab internal''''' | '''''Unless otherwise stated, this page is written by DTU Nanolab internal''''' | ||
==III-V RIE Plassys== | ==III-V RIE Plassys <span style="background:#ff0000"> This tool has been decommissioned - please ask the dryetch group for alternatives.</span>== | ||
===(will be decommissioned October 2025)=== | |||
Name: MG300 RIE <br> | Name: MG300 RIE <br> | ||
| Line 56: | Line 57: | ||
*Resist: ~30-98 nm/min (AZ5206 and ZEP520A), ~70-815 nm/min (AZ5214) | *Resist: ~30-98 nm/min (AZ5206 and ZEP520A), ~70-815 nm/min (AZ5214) | ||
*InP: ~29 nm/min | *InP: ~29 nm/min | ||
* | *InGaAs: ~9 nm/min | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Anisotropy | |style="background:LightGrey; color:black"|Anisotropy | ||