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=My First JEOL 9500 Exposure Guide=
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/FirstEBL click here]'''
The JEOL 9500 E-beam writer offers world class performance, this however comes at a price of a fairly steep learning curve. This page is specifically intended to guide new users through their very first exposure on the system. In this guide we will set up a simple wafer/chip exposure using a single beam current and without pattern alignment. The complexity of this job is kept at a very low level and we encourage new users to make sure their first job (first training session) matches this complexity level. More complex jobs can be run when a user is more familiar with the system.


==Example job==
Content and illustration by Thomas Pedersen, DTU Nanolab unless otherwise noted.
The example provided here demonstrates one way to set up a dose test of a particular pattern on a blank 4" silicon wafer. Dose testing is often necessary to obtain the desired critical dimension and it is vital to be able to set up such a job in an efficient manner. In this example we set up the dose variation/modulation by manually writing a short modulation table. For more complex dose tests or dose test of proximity corrected patterns one should consider using the Chipplace module found in Beamer.  


The pattern used in this example is a DTU logo.
=My first JEOL 9500 exposure tutorial=
The JEOL 9500 E-beam writer offers world class performance, this however comes at a price of a fairly steep learning curve. This page is specifically intended to guide new users through their very first exposure on the system. This tutorial will demonstrate how to set up a simple dose test in an efficient manner. The complexity of this job is kept at a low level and we encourage new users to make sure their first job (first training session) matches this complexity level. More complex jobs can be run when a user is more familiar with the system. We will in particular request that users do '''not''' expect to do alignment during their first training session.


==JEOL 9500 example workflow==
 
The workflow of our example JEOL 9500 job is summarized below and explained in detail in the subsequent sections. In order to optimize usage of the system steps 1 through 3 must all be done ahead of the booked session on the 9500 system.  
A video showing the execution of the tutorial job [https://www.youtube.com/watch?v=-wZpUNAq8dA is available here.]
 
==Tutorial job==
The tutorial demonstrates one way to set up a dose test of a particular pattern on a blank 4" silicon wafer. Dose testing is often necessary to obtain the desired critical dimension and it is vital to be able to set up such a job in an efficient manner. In this tutorial we set up the dose variation (modulation) by manually writing a short modulation table. For more complex dose tests or dose test of proximity corrected patterns one should consider using the [[Specific_Process_Knowledge/Lithography/EBeamLithography/BEAMER#ChipPlace_-_easy_dose_test_setup|Chipplace module]] in Beamer.
 
The pattern used in this example is a DTU logo with a size of 5 x 8 µm<sup>2</sup>.
 
==JEOL 9500 workflow==
The workflow of the tutorial job is summarized below and explained in detail in the subsequent sections. In order to optimize usage of the system steps 1 through 3 must all be done ahead of the booked session on the JEOL 9500 system.  


#Substrate preparation - resist coating
#Substrate preparation - resist coating
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#Development
#Development


In the following we will look at each step in more detail and show step by step how to make a wafer/chip exposure.
The following will provide details of all steps in this process.


==Resist coating==
==Resist coating==
DTU Nanolab offers a few different standard resist as given in the table below. Typically layers of 50-500 nm are applied. The Gamma UV & E-beam coater has predefined recipes for various thickness of CSAR resist. For other thickness or other resist the more manual Lab Spin 2 or 3 coasters can be used.  
DTU Nanolab offers a few different standard resist as given in the table below. Typically layers of 50-500 nm are applied. [[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing|The Gamma E-beam and UV coater]] has predefined recipes for various thickness of CSAR resist. For other thickness or other resist the more manual [[Specific_Process_Knowledge/Lithography/Coaters/labspin|LabSpin 2 or 3 coasters]] can be used.  


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
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|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/CSAR|CSAR AR-P 6200]]'''
|'''[[Specific_Process_Knowledge/Lithography/CSAR|CSAR AR-P 6200.09]]'''
|Positive
|Positive
|[http://www.allresist.com AllResist]
|[http://www.allresist.com AllResist]
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*AR-600-71  
*AR-600-71  
*Remover 1165
*Remover 1165
|[[media:Process_Flow_CSAR.docx‎|CSAR]] <br> [[media:Process Flow CSAR with Al.docx|CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|LOR5A with CSAR]] <br>  
|[[Media:Process Flow CSAR.docx|CSAR]] <br> [[Media:Process Flow CSAR with Al.docx|CSAR with Al]] <br> [[Media:Process Flow LOR5A CSAR Developer TMAH Manual.docx|LOR5A with CSAR]] <br>  


|-
|-
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|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
|'''AR-N 7500'''
|'''AR-N 7500.18'''
|Negative
|Negative
|[http://www.allresist.com AllResist]
|[http://www.allresist.com AllResist]
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For our example process we will use a standard 4” silicon wafer and coat it with 180 nm CSAR on the fully automatic Gamma E-beam & UV coater using recipe 4318. [https://youtu.be/3JhM3rmLVpA A video demonstrating usage of our Gamma coaters can be found here.] Bear in mind the video shows the UV resist coater and not the E-beam resist coater but they are identical in operation.
The tutorial job uses a standard 4” silicon wafer and the wafer is coated with 180 nm CSAR on the fully automatic [[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing|Gamma E-beam and UV coater]] using recipe 4318. [https://youtu.be/3JhM3rmLVpA A video demonstrating usage of our Gamma coaters can be found here.] Bear in mind the video shows the UV resist coater and not the E-beam resist coater but they are identical in operation.


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|-  
|-  
| colspan="1" style="text-align:center;|
| colspan="1" style="text-align:center;|
2", 4" and 6" substrates can be coated with AR-P6200.09 (CSAR) on Spin Coater: Gamma E-beam & UV. Photo: Thomas Pedersen.
2", 4" and 6" substrates can be coated with AR-P6200.09 (CSAR) on [[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing|Spin Coater: Gamma E-beam & UV]]. Photo: Thomas Pedersen.
|}
|}


=Pattern preparation=
=Pattern preparation=
In order to expose a pattern it must be converted to V30 format (JEOL52 V3.0) using Beamer. Beamer can read several different file formants, we recommend using GDS as your input format. Beamer can do a lot of different operations on a pattern to better optimise it for writing. In this guide we will skip all of these operations and simply export the GDS pattern to a V30 file. For more advanced functionality and pattern preparation please refer to our Beamer pattern preparation guide.
In order to expose a pattern it must be converted to V30 format (JEOL52 V3.0) using Beamer. Beamer can read several different file formants, we however recommend using GDS as your input format. Beamer can do a lot of different operations on a pattern to better optimise it for writing. In this tutorial we will skip all of these operations and simply export the GDS pattern to a V30 file. For more advanced functionality and pattern preparation please refer to our [[Specific_Process_Knowledge/Lithography/EBeamLithography/BEAMER|Beamer pattern preparation guide.]]


Beamer uses a node based system where each node performs an action on the pattern. In this simple example we will just have an import node to import our GDS file and connect it to an export node to output it as V30. The setup is thus as simple as can be and will look like below, the left hand side shows the simple node setup while the right side shows the pattern which in this case is a DTU logo.
Beamer uses a node based system where each node performs an action on the pattern. In this simple example we will just have an import node to import our GDS file and connect it to an export node to output it as V30. The setup is thus as simple as can be and will look like below, the left hand side shows the simple node setup while the right side shows the pattern which in this case is a DTU logo.
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Each node has several options and these can be changed by double clicking the node. For the export node we will need to choose the correct machine in "Machine Type", the DTU Nanolab system is "JBX-9500FS (100kV)". On the advanced tab we will choose "Floating" field ordering and "Center to Field". This will ensure that our features/pattern will be written in the center of the writing field. The setup will look like the parameters below.
Each node has several options and these can be changed by double clicking the node. For the export node we will need to choose the correct machine in '''Machine Type''', the DTU Nanolab system is a '''JBX-9500FS (100kV)'''. On the advanced tab we will choose '''Floating''' field ordering and '''Center to Field'''. This will ensure that our features/pattern will be written in the center of the writing field. The setup will look like the parameters below. Running this setup will import the GDS file and export it to V30.


{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
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In order to execute the pattern writing a significant number of parameters must be defined for the job. These are defined in two text files; the Schedule File (SDF) and Jobdeck File (JDF). The system has a close to zero tolerance on syntax error from the user and thus these files should be prepared carefully, usually by using templates and correcting the parameters to suit the exposure. We encourage users to [https://www.wolosoft.com/en/superedi/ download and use SuperEdi] for editing SDJ/JDF files. As the JEOL 9500 is operated from a Unix computer you must save your SDF/JDF files in Unix format, available as an option from the “Save As” menu in SuperEdi.
In order to execute the pattern writing a significant number of parameters must be defined for the job. These are defined in two text files; the Schedule File (SDF) and Jobdeck File (JDF). The system has a close to zero tolerance on syntax error from the user and thus these files should be prepared carefully, usually by using templates and correcting the parameters to suit the exposure. We encourage users to [https://www.wolosoft.com/en/superedi/ download and use SuperEdi] for editing SDJ/JDF files. As the JEOL 9500 is operated from a Unix computer you must save your SDF/JDF files in Unix format, available as an option from the “Save As” menu in SuperEdi.
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:SuperEdi.png|189px]]
|-
| colspan="1" style="text-align:center;|
The bottom right corner of SuperEdi must say '''UNIX''' for the JEOL 9500 computer to interpret the file correctly at compilation.
|}


The SDF is the governing job descriptor. It defines which cassette to use for exposure, which slot of that cassette to expose, which beam current to expose with and the base dose of the exposure. The SDF will reference the JDF with further job information such as which pattern to write and where to write the pattern. The JDF will in turn reference a (or set of) V30 pattern files that hold the pattern(s) to write.
The SDF is the governing job descriptor. It defines which cassette to use for exposure, which slot of that cassette to expose, which beam current to expose with and the base dose of the exposure. The SDF will reference the JDF with further job information such as which pattern to write and where to write the pattern. The JDF will in turn reference a (or set of) V30 pattern files that hold the pattern(s) to write.
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#8                            Cassette from auto stocker shelf 8 is used
#8                            Cassette from auto stocker shelf 8 is used
%4A                           4" wafer in position A is exposed
%4B                           4" wafer in position A is exposed
JDF    'myfirstebl',1        Layer block no. 1 of the jdf-file 'myfirstebl.jdf' is exposed     
JDF    'myfirstebl',1        Layer block no. 1 of the jdf-file 'myfirstebl.jdf' is exposed     
ACC 100                      Acceleration voltage of 100keV is used (can not be changed)
ACC 100                      Acceleration voltage of 100keV is used (can not be changed)
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|-  
|-  
| colspan="1" style="text-align:center;|
| colspan="1" style="text-align:center;|
Resulting setup from the example job. The pattern (DTU logo) is instanced 10 times with a pitch of 50 µm. The dose is modulated between 200 and 290 µC/cm<sup>2</sup>.
Resulting setup from the example job. The pattern (DTU logo) is instanced 10 times with a pitch of 50 µm. The dose is modulated between 200 and 290 µC/cm<sup>2</sup>. Pattern size is increased  for visibility, actual size is 5 x 8 µm<sup>2</sup>.
|}
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*Login to the support PC using your DTU credentials.
*Login to the support PC using your DTU credentials.
*Open “FFFTP”
*Open the “FFFTP setup” folder found on the desktop
*Click “New connection” and fill the fields as shown in the "Host Setting" window below
*Double click "FFFTP setup.reg" and accept the warnings
*Password is "Jeoleb"
 
*Initial Local Folder should be your own M-drive or similar
Now FFFTP is setup with access to the JEOL 9500 computer on your Windows account. Open FFFTP and click "Connect" in. It should open with your M drive on the left side and the JEOL9500 PC on the right hand side. You can now drag and drop files between the two folders or browse for other folders. The SDF and JDF files go in the same folder, the pattern data however goes into a separate folder. The correct folders are:


*SDF/JDF: /home/eb0/jeoleb/job/1nlab
*V30: /home/eb0/jeoleb/pattern/nanolabv30


{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
|-
| [[image:FFFTP.png|1200px]]
| [[image:FFFTP2.png|800px]]
|-  
|-  
| colspan="1" style="text-align:center;|
| colspan="1" style="text-align:center;|
Setup of FFFTP connection to the JEOL 9500 control PC and user interface of the FFFTP file transfer program. Local drive is on the left window and destination drive is on the right window.
User interface of the FFFTP file transfer program. Local drive is on the left window and destination drive is on the right window.
|}
|}


=Job file compilation=
Once the files are transferred to the EBL control computer they can be compiled into a magazine file. The Unix interface has several desktops. Desktop one is used for EBL control and desktop two is used for file compilation. In a terminal window on desktop two the SDF, JDF and V30 files can be compiled into a MGN file with the SCHD command. Compile the files with the following procedure:


Now you can click "Connect" in FFFTP and it opens with your drive on the left side and the JEOL9500 PC on the right hand side. You can now drag and drop files between the two folders. The SDF and JDF files go in the same folder, the pattern data however goes into a separate folder. The correct folders are:
*Select a terminal window
*Make sure to be in the correct folder by writing "cd job/1nlab"
*Compile by writing "schd -exptime sdffilename", replacing sdffilename with the actual filename
*Verify that the compiler presents a sequence list with a time estimate, this indicates successful compilation
 
 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:9500terminal1.png|501px]]
|-
| colspan="2" style="text-align: center;|
Terminal window after compilation. The first line changes working directory, second line calls compilation.
|}


*SDF/JDF: /home/eb0/jeoleb/job/danchip
*V30: /home/eb0/jeoleb/pattern/danchipv30


=Job file compilation=
Once the files are transferred to the EBL control computer they can be compiled into a magazine file. The Unix interface has several desktops. Desktop one is used for EBL control and desktop two is used for file compilation. In a terminal window on desktop two the SDF, JDF and V30 files can be compiled into a MGN file with SCHD command by writing “schd -exptime sdffilename”, where the last part is the name of the actual SDF to compile.


If compilation is successful the terminal will provide a table of exposure sequences and their corresponding exposure times. Also, a .MGN file will be generated in the same folder as the SDF file. This file holds all relevant exposure information and it is this file one will load to the Expose module to initiate exposure.
If compilation is successful the terminal will provide a table of exposure sequences and their corresponding exposure times. Also, a .MGN file will be generated in 1nlab folder. This file contains all relevant exposure information and it is this file one will load to the Expose module to initiate exposure.


If compilation does not succeed the terminal will respond with a number of errors indicating which line(s) of the SDF or JDF file is causing the error. The system is extremely sensitive to syntax error and all users will experience compilation errors. The errors can be difficult to decipher, please refer to the '''Compilation Error Guide. UPDATE'''
If compilation does not succeed the terminal will respond with a number of errors indicating which line(s) of the SDF or JDF file is causing the error. The system is extremely sensitive to syntax error and all users will experience compilation errors. The errors can be difficult to decipher, please refer to the '''Compilation Error Guide. UPDATE'''


=Job file verification=
=Job file verification=
To ensure that the pattern and exposure parameters are correct the MGN file should always be verified to some extent. This can be done using the Array Check Program '''(ACHK)''' program found on the '''Analysis''' pane. The '''Analysis''' pane is usually open on the right hand side of the second desktop, if not, it can be opened from the '''EBX Menu.''' Open '''ACHK''' from the '''Analysis''' pane and click “File” -> “Open” and open your magazine file.
To ensure that the pattern and exposure parameters are correct the MGN file should always be verified to some extent. It is rarely feasible or necessary to manually validate all parts of a design but one should at least inspect a few parts of the pattern to verify it looks correct and also verify that pattern placement is as expected. This can be done using the Array Check Program '''(ACHK)''' found on the '''Analysis''' pane. The '''Analysis''' pane is usually open on the right hand side of the second desktop, if not, it can be opened from the '''EBX Menu.''' Pattern check can be done by the following procedure:
 
*Open '''ACHK''' from the '''Analysis''' pane
*Click “File” -> “Open” and open your magazine file
*The pattern placement is now shown. Zoom into the pattern by left click and drag a box to zoom in
*Click an instance of the pattern, it changes color to red
*To see the actual pattern of the selected instance click '''View''' -> '''Shot shape display...'''
*In '''Shot shape display''' click '''Simulation'''
*Change the '''Objective aperture''' on the drop down to the correct aperture, in this case aperture 6 and click '''OK'''. This will set the correct beam size for visualization
*In '''Shot shape display''' check off '''Field boundary, Colored shot rank, Fill in a pattern''' and choose '''ASD''' on the '''Shot form''' drop down
*The pattern is now visible and one can zoom in to see individual beam shots and how they overlap with the selected scan pitch
*Once verified, close '''Shot shape display''' and '''Array check program'''
 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:9500achk1.png|500px]] || [[image:9500achk3.png|500px]]
|-
| colspan="2" style="text-align: center;|
'''ACHK''' shows how patterns are placed on the substrate. It will however only show the bounding box of the pattern. In this case the pattern is very small compared to the 4" wafer and thus one has to zoom into the center to see the 10 instances of the design.
|}
 
 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:9500shot1.png|400px]] || [[image:9500shot2.png|500px]] || [[image:9500shot3.png|500px]]
|-
| colspan="3" style="text-align: center;|
Use Shot shape display to verify that the pattern and beam pitch/overlap looks as intended.
|}


=Sample mounting=
=Sample mounting=
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| colspan="2" style="text-align: center;|
| colspan="2" style="text-align: center;|
Operation screen of the automatic cassette transfer system / auto stocker. Photo: Thomas Pedersen.
Operation screen of the automatic cassette transfer system / auto stocker.
|}
|}


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| colspan="2" style="text-align: center;|
| colspan="2" style="text-align: center;|
Samples can be loaded into appropriate cassettes on the cassette preparation table. Photo: Thomas Pedersen.
Samples can be loaded into appropriate cassettes on the cassette preparation table.
|}
|}


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{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
|-
| [[image:EBXMenu.png|713px]]
| [[image:EBXMenu.png|500px]]
|-  
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| colspan="1" style="text-align:center;|
| colspan="1" style="text-align:center;|
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{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
|-
| [[image:EBLLoader.png|867px]]
| [[image:EBLLoader.png|600px]]
|-  
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| colspan="1" style="text-align:center;|
| colspan="1" style="text-align:center;|
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|-  
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| colspan="2" style="text-align:center;|
'''Calibration''' and '''RESTOR''' windows. Image: Thomas Pedersen.
'''Calibration''' and '''RESTOR''' windows.
|}
|}


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|-  
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| colspan="1" style="text-align:center;|
| colspan="1" style="text-align:center;|
Result display of current measurement. Image: Thomas Pedersen.
Result display of current measurement.
|}
|}


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|-  
|-  
| colspan="2" style="text-align:center;|
| colspan="2" style="text-align:center;|
Correct result of '''INITAE''' (left) and '''INITBE''' (right). Image: Thomas Pedersen.
Correct result of '''INITAE''' (left) and '''INITBE''' (right).  
|}
|}


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|-  
|-  
| colspan="1" style="text-align:center;|
| colspan="1" style="text-align:center;|
Load the '''daily''' batch command and execute it. Image: Thomas Pedersen.
Load the '''daily''' batch command and execute it.
|}
|}


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|-  
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| colspan="1" style="text-align:center;|
| colspan="1" style="text-align:center;|
Comparison of two drift measurements. Image: Thomas Pedersen.
Comparison of two drift measurements.  
|}
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|-  
|-  
| colspan="1" style="text-align:center;|
| colspan="1" style="text-align:center;|
Parameters of the '''HEIMAP''' subprogram used for the tutorial exposure. Image: Thomas Pedersen.
Parameters of the '''HEIMAP''' subprogram used for the tutorial exposure.  
|}
|}


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|-  
|-  
| colspan="1" style="text-align:center;|
| colspan="1" style="text-align:center;|
Acquire the calibration data and then apply the data to save. Image: Thomas Pedersen.
Acquire the calibration data and then apply the data to save.  
|}
|}


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|-  
|-  
| colspan="1" style="text-align:center;|
| colspan="1" style="text-align:center;|
'''Expose''' window with .mgn file loaded for exposure. Notice that the '''Progress''' part of the window still shows the previous exposure information. This field will not update until exposure is started. Image: Thomas Pedersen.
'''Expose''' window with .mgn file loaded for exposure. Notice that the '''Progress''' part of the window still shows the previous exposure information. This field will not update until exposure is started.  
|}
|}


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|-  
|-  
| colspan="1" style="text-align:center;|
| colspan="1" style="text-align:center;|
Use the '''Pattern writing execution check''' window to verify the cassette number and estimated execution time. Image: Thomas Pedersen.
Use the '''Pattern writing execution check''' window to verify the cassette number and estimated execution time.  
|}
|}


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=Development=
=Development=
Development of EBL resist can be done in two ways, either in beakers or on the automatic E-beam developer tool. The latter is equipped with ZED N50 for development of ZEP resist and AR 600-546 for development of CSAR. The system can handle chips or wafers up to 6”. It has predefined develop cycle times of 15, 30, 60 and 120 seconds. For other developers users have to use the EBL development fumehood in E4 and manually develop their substrates in beakers of appropriate size. Please observe there are beakers dedicated solvent developers such as isopropanol and other beakers dedicated alkaline developers.  
Development of EBL resist can be done in two ways, either in beakers or on the semi-automatic E-beam developer tool, [[Specific_Process_Knowledge/Lithography/Development#Developer:_E-beam|Developer:E-beam.]] The latter is equipped with ZED N50 for development of CSAR (AR-P 6200). The system can handle chips or wafers up to 8”. It has predefined develop cycle times of 15, 30, 60 and 120 seconds. For other developers users have to use the EBL development fumehood in E4 and manually develop their substrates in beakers of appropriate size. Please observe there are beakers dedicated solvent developers such as isopropanol and other beakers dedicated alkaline developers.  
 
For this turorial job we simply put the 4" wafer on the center of the vacuum chuck, clamp it with vacuum, select the 60 sec recipe and press start.
 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:TPE02819-2.jpg|300px]]
|-
| colspan="1" style="text-align:center;|
Developer: E-beam is a semi-automatic puddle developer with ZED N50 developer.
|}


Initially the result can be verified in an optical microscope as shown below. Notice how only 9 out of the 10 instances are visible. The instance with the lowest dose is missing since it was written with insufficient dose for the resist used. Actual pattern confirmation for EBL patterns will naturally usually require use of a SEM.
Initially the result can be verified in an optical microscope as shown below. Notice how only 9 out of the 10 instances are visible. The instance with the lowest dose is missing since it was written with insufficient dose for the resist used. Actual pattern confirmation for EBL patterns will naturally usually require use of a SEM.
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|-  
|-  
| colspan="1" style="text-align:center;|
| colspan="1" style="text-align:center;|
Result of the tutorial job after development. Image: Thomas Pedersen.
Result of the tutorial job after development.
|}
|}
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