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Specific Process Knowledge/Lithography/Resist/Ebeamresist: Difference between revisions

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*AR-600-71  
*AR-600-71  
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*Remover 1165
|[[media:Process_Flow_CSAR.docx‎|Process Flow CSAR.docx‎]] <br> [[media:Process Flow CSAR ESPACER.docx|Process Flow CSAR with ESPACER]] <br> [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|Process Flow LOR5A with CSAR]] <br>  
|<br> [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|Process Flow LOR5A with CSAR]] <br>  


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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
|'''[[Specific_Process_Knowledge/Lithography/mrEBL6000|mr EBL 6000.1]]'''
|'''mr EBL 6000.1'''
|Negative
|Negative
|[http://http://www.microresist.de/home_en.htm MicroResist]
|[http://http://www.microresist.de/home_en.htm MicroResist]
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|[[media:Process Flow HSQ.docx|process flow HSQ]]
|[[media:Process Flow HSQ.docx|process flow HSQ]]
[[/High resolution patterning with HSQ|High resolution patterning with HSQ]]


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