Specific Process Knowledge/Etch/III-V ICP/GaAs-AlGaAs: Difference between revisions
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|Platen chiller temperature | |Platen chiller temperature | ||
|20 <sup>o</sup>C | |20<sup>o</sup>C | ||
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|Sidewall angle | |Sidewall angle | ||
|~ 85-90 <sup>o</sup> | |~ 85-90<sup>o</sup> | ||
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|Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | |Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | ||
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|20 <sup>o</sup>C | |20<sup>o</sup>C | ||
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|Sidewall angle | |Sidewall angle | ||
|~ 90 <sup>o</sup> | |~ 90<sup>o</sup> | ||
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|Selectivity (GaAs:SiO<sub>2</sub>) | |Selectivity (GaAs:SiO<sub>2</sub>) | ||
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|20 <sup>o</sup>C | |20<sup>o</sup>C | ||
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|85-90 <sup>o</sup> | |85-90<sup>o</sup> | ||
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|Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | |Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | ||
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![[image:ICP_BCL3_result.jpg|300x300px|thumb|left|Result of GaAs etching with BCl<sub>3</sub>. Qijiang Ran, DTU Photonics, 2011. ]] | ![[image:ICP_BCL3_result.jpg|300x300px|thumb|left|Result of GaAs etching with BCl<sub>3</sub>. Done by: Qijiang Ran, DTU Photonics, 2011. ]] | ||
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Latest revision as of 10:47, 4 September 2025
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GaAs/AlGaAs etching using III-V ICP
Recipes developed and/or tested by DTU Photonics internal before 2011
| Recipe | GaAs Etch |
| Cl2 flow | 4 sccm |
| Ar flow | 12 sccm |
| Platen power | 80 W |
| Coil power | 700 W |
| Pressure | 6 mTorr |
| Platen chiller temperature | 20oC |
| Results (GaAs Etch) | |
| GaAs etch rate | >500 nm/min |
| Sidewall angle | ~ 85-90o |
| Selectivity (GaAs:Si3N4, GaAs:AlInP) | 10:1, 5:1 |
| Recipe | GaAs_AlGaAs Etch |
| Cl2 flow | 20 sccm |
| N2 flow | 50 sccm |
| Platen power | 100 W |
| Coil power | 600 W |
| Pressure | 2 mTorr |
| Platen chiller temperature | 20oC |
| Results (GaAs_AlGaAs Etch) | |
| AlGaAs etch rate | >1000 nm/min |
| Sidewall angle | ~ 90o |
| Selectivity (GaAs:SiO2) | 30:1 |
| Recipe | GaAs_AlGaAs Etch_BCl3 |
| Cl2 flow | 10 sccm |
| BCl3 flow | 10 sccm |
| Ar flow | 10 sccm |
| N2 flow | 4 sccm |
| Platen power | 50 W |
| Coil power | 500 W |
| Pressure | 1 mTorr |
| Platen chiller temperature | 20oC |
| Results (GaAs_AlGaAs Etch_BCl3) | |
| GaAs etch rate | >750 nm/min |
| Sidewall angle | 85-90o |
| Selectivity (GaAs:Si3N4, GaAs:AlInP) | 10:1 |
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