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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/Wet_III-V_Etches click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/Wet_III-V_Etches click here]'''  
[[Category: Equipment|Etch Wet III-V]]
[[Category: Etch (Wet) bath|III-V]]


This is a collection of III-V wet-etches; the rates should be tested before use. Make sure you have the proper education in mixing of chemicals before use. Wet etching of III-V materials is primarily to be done in 'Fume hood 07: III-V acids/bases'. Contact information, risk assessment and manual regarding this fume hood can be found in LabManager:
This is a collection of III-V wet-etches; the rates should be tested before use. Make sure you have the proper education in mixing of chemicals before use. Wet etching of III-V materials is primarily to be done in 'Fume hood 07: III-V acids/bases'. Contact information, risk assessment and manual regarding this fume hood can be found in LabManager:
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For dry etching III-V materials see
For dry etching III-V materials see
*[[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]]
*[[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]]
*[[Specific Process Knowledge/Etch/III-V RIE|III-V RIE - Plassys]]
*[[Specific Process Knowledge/Etch/III-V RIE|III-V RIE - Plassys]] (will be decommissioned October 2025)
 
 
 


== InP substrate etching ==


== InP or GaAs substrate etching ==
When etching InP substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.


When etching InP or GaAs substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.
There should be a bottle in the fumehood for HCl used to etch InP substrates.
Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. For InP waste a clean and empty developer bottle can be used.


There should be two bottles in the fumehood one for HCl used to etch InP substrates and one for citric acid: H2O2 or H2SO4 (10%):H2O2 used to etch GaAs substrates.
== GaAs substrate etching ==
Once the bottles are full, you should bring them in the basement of building 346 and have a new one in CR. '''For the GaAs waste you should use empty H2O2 bottles (since they should have a special lid that avoid overpressure)''', while for InP waste we can use an empty and clean developer bottle.
 
When etching GaAs substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.
 
There should be a bottle in the fumehood for citric acid: H2O2 or H2SO4 (10%):H2O2 used to etch GaAs substrates.
Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. '''For the GaAs waste you should use empty H2O2 bottles (since they should have a special lid that avoid over pressure).'''


==HCl:H3PO4 etch==
==HCl:H3PO4 etch==
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The above C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O<sub>2</sub> solution has an etch-rate of ~360 nm/min in GaAs and < 0.5 nm/min in AlAs @ 25 degC.
The above C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O<sub>2</sub> solution has an etch-rate of ~360 nm/min in GaAs and < 0.5 nm/min in AlAs @ 25 degC.
==More info regarding etching of III-V materials==
More info on etching of III-V materials (not the DTU Nanolab wiki) can be found here:
https://wiki.nanofab.ucsb.edu/wiki/Wet_Etching_Recipes '''(at the UCSB Nanofab Wiki)'''
and
https://www.sciencedirect.com/science/article/pii/S0927796X00000279 '''(at the UCSB Nanofab Wiki)'''
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