Specific Process Knowledge/Etch/Etching of Titanium: Difference between revisions
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*<nowiki>#</nowiki>1 150mm wafers | *<nowiki>#</nowiki>1 150mm wafers | ||
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Latest revision as of 13:36, 18 April 2024
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Etching of Titanium
Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions.
Comparison of Titanium Etch Methodes
Ti wet etch 1 | Ti wet etch 2 | ICP metal | IBE (Ionfab300+) | |
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Generel description | BHF Etch of titanium with or without photoresist mask. | Cold RCA1 mix etch of titanium (as stripper or with eagle resist). | Dry plasma etch of Ti | Sputtering of Ti - pure physical etch |
Etch rate range |
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Etch profile |
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Substrate size |
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Smaller pieces glued to carrier wafer
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Allowed materials |
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals |
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals |
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