Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
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*[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]] | *[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]] | ||
*[[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE|Etch of Silicon Nitride using AOE]] | *[[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE|Etch of Silicon Nitride using AOE]] | ||
*[[Specific_Process_Knowledge/Etch/Etching_of_Silicon_Oxide/SiO2_etch_using_ASE|Nitride etch using ASE]] | |||
*[[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/Ion Beam Etching using IBSD Ionfab 300]] | *[[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/Ion Beam Etching using IBSD Ionfab 300]] | ||
*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride|Silicon nitride etch using the ICP metal]] | *[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride|Silicon nitride etch using the ICP metal]] | ||
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![[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]] | ![[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]] | ||
![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|BHF]] | ![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|BHF]] | ||
![[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4|Pegasus 4]] | |||
![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | |||
![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)|ASE]] | ![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)|ASE]] | ||
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ||
![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal]] | ![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal]] | ||
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*Isotropic etch | *Isotropic etch | ||
*Well suited for removing all PECVD nitride on a wafer surface (nitride strip) without a mask. Etches LPCVD nitride very slowly | *Well suited for removing all PECVD nitride on a wafer surface (nitride strip) without a mask. Etches LPCVD nitride very slowly | ||
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* Anisotropic etch: vertical sidewalls | |||
* With cassette loader for batch processing. | |||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls | ||
*Deep etch | |||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls | ||
* | *Primarily for samples with small amounts of metal | ||
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*Primarily for pure physical etch by sputtering with Ar-ions | *Primarily for pure physical etch by sputtering with Ar-ions | ||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls | ||
*Primarily for Cl/Br etch chemistry. | |||
*F-chemistry, please use AOE or Pegasus 4. | |||
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*Silicon Nitride | *Silicon Nitride | ||
*Aluminium | *Aluminium | ||
* | *Chromium (if needed) | ||
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*Photoresist | |||
*DUV resist | |||
*E-beam resist | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Aluminium | |||
*Chromium (if needed) | |||
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*Photoresist | *Photoresist | ||
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*Silicon Nitride | *Silicon Nitride | ||
*Aluminium | *Aluminium | ||
* | *Metals if they cover less than 5% of the wafer area | ||
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*Any material that is accepted in the machine | *Any material that is accepted in the machine | ||
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*PECVD nitride: ~40.0-100.0 nm/min | *PECVD nitride: ~40.0-100.0 nm/min | ||
*Stoichiometric LPCVD nitride: ~0.65-8 nm/min (''Yannick Seis, KU, 2019'') | *Stoichiometric LPCVD nitride: ~0.65-8 nm/min <!-- Copyrigth issues kabi (''Yannick Seis, KU, 2019'')--> | ||
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*Process dependent. | |||
*From 0 to ~300 nm/min | |||
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* | *Process dependent. | ||
*from 0 to ~500 nm/min | |||
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* | *Probably between 20-300 nm/min depending on the process parameters | ||
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*Process dependent. | *Process dependent. | ||
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*<nowiki>#</nowiki>1-25 4"-6" wafers | *<nowiki>#</nowiki>1-25 4"-6" wafers | ||
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*As many small samples as can be | *As many small samples as can be bonded on a 150mm wafer | ||
*<nowiki>#</nowiki>1 | *50 mm wafers if bonded on a 150mm wafer | ||
* | *<nowiki>#</nowiki>1 100 mm wafer if bonded on a 150 mm wafer | ||
*#1 150 mm wafer | |||
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*As many small samples as can be fitted on a 100mm wafer | *As many small samples as can be fitted on a 100mm wafer | ||
*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer | *<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer | ||
*<nowiki>#</nowiki>1 100 mm wafer | *<nowiki>#</nowiki>1 100 mm wafer | ||
*<nowiki>#</nowiki>1 | | | ||
*As many small samples as can be fitted on the 100mm carrier (bad/no cooling!) | |||
*<nowiki>#</nowiki>1 100mm wafer (or smaller with carrier) | |||
*<nowiki>#</nowiki>1 150mm wafer (only when the system is set up for 150mm) | |||
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*As many samples as can be securely fitted on a up to 200mm wafer | *As many samples as can be securely fitted on a up to 200mm wafer | ||
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*E-beam resists | *E-beam resists | ||
*DUV resists | *DUV resists | ||
* | *Aluminium (only for masking | ||
*Chromium (only for masking and on the back side if fused silica) | |||
*Quartz/fused silica | *Quartz/fused silica | ||
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*DUV resists | *DUV resists | ||
*Aluminium | *Aluminium | ||
*Chromium ( | *Chromium (only for masking and on the back side if fused silica) | ||
*Quartz/fused silica | |||
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*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*E-beam resists | |||
*DUV resists | |||
*Other metals if they cover less than 5% of the wafer area | |||
*Quartz/fused silica | *Quartz/fused silica | ||
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