Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions

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 ![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
 ![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
+![[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2|DRIE-Pegasus 2]]
 |-
 |-
 |-style="background:WhiteSmoke; color:black"
-!Generel description
+!General description
 |Wet etch of Cr premixed (Chrome etch 18)
 |Dry plasma etch of Cr
 |Sputtering of Cr - pure physical etch
+|Primarily shallow dry etching of silicon but also thin layers of SiO2, TaO2 and Cr
 |-
@@ Line 46: / Line 48: @@
 |
 *~30nm/min (not tested yet)
+|
+* very slow
 |-
@@ Line 57: / Line 61: @@
 |
 *Anisotropic (angles sidewalls, typical around 70 dg)
+|
+*Anisotropic (vertical sidewalls)
 |-
 |-
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 *Any size and number that can go inside the beaker in use
 |
-*smaller pieces on a carrier wafer
+* 150 mm wafers
-*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
+* Smaller wafers or pieces on a 150 mm carrier wafer
-*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
 |
 Smaller pieces glued to carrier wafer
-*<nowiki>#</nowiki>1 50mm wafer
+* 50mm wafer
-*<nowiki>#</nowiki>1 100mm wafer
+* 100mm wafer
-*<nowiki>#</nowiki>1 150mm wafer
+* 150mm wafer
-*<nowiki>#</nowiki>1 200mm wafer
+* 200mm wafer
+|
+* 150mm wafer
+* Smaller wafers or pieces on 150mm carrier
 |-
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 *Polymers
 *Capton tape
+|
+* Silicon
+* Silicon oxides
+* Silicon nitrides
+* Thin layers of Cr, TaO2
 |-
 |}