Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions

Latest revision as of 08:39, 10 May 2023

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EXPIRED - The APOX furnace has been removed from the cleanroom August 2019.

Apox furnace (D1)

The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075^oC. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.

This furnace is positioned in the III-V cleanroom area. Only Nanolab employees are allowed to operate the furnace.

The user manual, technical information and contact information can be found in LabManager:

APOX Furnace (D1)

Process knowledge

Oxidation: look at the Oxidation page

Overview of the performance of the Apox furnace and some process related parameters

Purpose	Oxidation and annealing	Oxidation: Wet: With bubbler (water steam + O₂)
Performance	Film thickness	Wet oxide: Thicker than > 5 µm (APOX layers)
Process parameter range	Process Temperature	1075 ^oC
	Process pressure	1 atm
	Gas flows	N₂: 0-10 slm O₂: 0-10 slm
Substrates	Batch size	1-200 4" wafer (or 2" wafers) per run
Substrates	Substrate material allowed	Silicon wafers (new from the box)

@@ Line 1: / Line 1: @@
-==D1 Furnace Apox==
+'''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_APOX click here]'''
-[[Image:D1.JPG|thumb|300x300px|D1 Furnace Apox: positioned in cleanroom ?]]
-D1 Furnace Apox is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated production of apox wafers which is a very thick thermal oxide grown at 1150 <sup>o</sup>C. Running a batch of apox wafers (oxide>5µm) can take several weeks.
+''This page is written by DTU Nanolab  internal''
+===<span style="color:Red">EXPIRED - The APOX furnace has been removed from the cleanroom August 2019.</span>===
+[[Category: Equipment |Thermal APOX]]
+[[Category: Thermal process|APOX]]
+[[Category: Furnaces|APOX]]
+==Apox furnace (D1)==
+[[Image:APOX.JPG|thumb|300x300px|Apox furnace (D1): positioned in the A-5 room/ Photo: DTU Nanolab internal]]
+The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075<sup>o</sup>C. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.
+This furnace is positioned in the III-V cleanroom area. Only Nanolab employees are allowed to operate the furnace.
+'''The user manual, technical information and contact information can be found in LabManager:'''
+'''[http://www.labmanager.dtu.dk/function.php?module=Machine&view=view&mach=159 APOX Furnace (D1)]'''
-This furnace is positioned in cleanroom ?. The furnaces are the cleanest process chambers in the cleanroom. Only new wafers from the box enters this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.
 ==Process knowledge==
@@ Line 10: / Line 28: @@
-==Overview of the performance of Apox furnace and some process related parameters==
+==Overview of the performance of the Apox furnace and some process related parameters==
-{| border="2" cellspacing="0" cellpadding="10"
+{| border="2" cellspacing="0" cellpadding="2"
 |-
-!style="background:silver; color:black;" align="left"|Purpose
+!style="background:silver; color:black;" align="center"|Purpose
-|style="background:LightGrey; color:black"|Oxidation and annealing
+|style="background:LightGrey; color:black"|
+Oxidation and annealing
 |style="background:WhiteSmoke; color:black"|Oxidation:
-*Wet: with bubbler (water steam + N<math>_2</math>)
+*Wet: With bubbler (water steam + O<sub>2</sub>)
 |-
-!style="background:silver; color:black" align="left"|Performance
+!style="background:silver; color:black" align="center"|Performance
 |style="background:LightGrey; color:black"|Film thickness
 |style="background:WhiteSmoke; color:black"|
-*Wet SiO<sub>2</sub>: used for layer thickness >5µm
+*Wet oxide: Thicker than > 5 µm (APOX layers)
 |-
-!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
+!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
-*1150 <sup>o</sup>C
+*1075 <sup>o</sup>C
 |-
 |style="background:LightGrey; color:black"|Process pressure
@@ Line 35: / Line 54: @@
 |style="background:LightGrey; color:black"|Gas flows
 |style="background:WhiteSmoke; color:black"|
-*N<math>_2</math>:? sccm
+*N<sub>2</sub>: 0-10 slm
+*O<sub>2</sub>: 0-10 slm
 |-
-!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
+!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|