Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Barc Etch: Difference between revisions
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===Sample=== | ===Sample=== | ||
*6" Si | *6" Si | ||
* | * 2 µm SiO2 from C1 | ||
* | *90 nm barc | ||
*907 nm UVN 2030-0,5 | *907 nm UVN 2030-0,5 | ||
*Reticle: Pegreticle | *Reticle: Pegreticle | ||