Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Barc Etch: Difference between revisions
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==Barc etch with O2== | ==Barc etch with O2== | ||
'' | {{CC-bghe2}}, ''June 2020'' | ||
===Sample=== | ===Sample=== | ||
*6" Si | *6" Si | ||
* | * 2 µm SiO2 from C1 | ||
* | *90 nm barc | ||
*907 nm UVN 2030-0,5 | *907 nm UVN 2030-0,5 | ||
*Reticle: Pegreticle | *Reticle: Pegreticle | ||
Latest revision as of 09:31, 4 September 2025
Barc etch with O2
Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab, June 2020
Sample
- 6" Si
- 2 µm SiO2 from C1
- 90 nm barc
- 907 nm UVN 2030-0,5
- Reticle: Pegreticle
- Dose: 200 J/m2
Pegasus 4 settings
- Recipe: Barc O2
- With 30 mm spacers
SEM images after barc etching
- C06207_02 Barc O2 30s
-
50% load, 4000 nm pitch, barc has been etched with a little undercut -
50% load, 2000 nm pitch, barc has been etched with a little undercut -
75% load, 1600 nm pitch, barc has been etched with a little undercut -
50% load, 400 nm pitch, barc has been etched with a little undercut expect where the lines have collided -
50% load, 1300 nm pitch -
50% load, 800 nm pitch
