Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4: Difference between revisions

From LabAdviser
Bghe (talk | contribs)
No edit summary
Bghe (talk | contribs)
 
(10 intermediate revisions by the same user not shown)
Line 6: Line 6:


==Pegasus 4 - 150mm silicon oxide and silicon nitride etching==
==Pegasus 4 - 150mm silicon oxide and silicon nitride etching==
[[Image:Peg3and4 front 2.JPG |frame|right|x250px|The DRIE-Pegasus3 and DRIE-Pegasus4 operator station and cassette loading stations, {{photo1}}]]


'''The tool is already installed and ready to process. You still have to make manual alignment in the cassette.  
DRIE-Pegasus 4 is dedicated Silicon oxide and Silicon nitride etching. It is originally designed for silicon etching but gas mass flow controllers has been changed to optimize silicon oxide and silicon nitride etching. The system is setup for 6" wafers. Sampler samples has to be bonded to a 6" carrier to be etched in the system.
'''


[[Image:Peg3and4 front 2.JPG |frame|left|x300px|The DRIE-Pegasus3 and DRIE-Pegasus4 operator station and cassette loading stations]]
'''The user manual and contact information can be found in LabManager:'''


 
<!-- give the link to the equipment info page in LabManager: -->
The user manual(s), quality control procedure(s) and results, user APV(s) '''are not available''', technical information and contact information can be found in LabManager:
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=456 DRIE Pegasus 4 in LabManager - requires login]
 
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=456| LabManager]


== Process information ==
== Process information ==
Line 24: Line 22:
*[[/Barc Etch|Barc Etch]]
*[[/Barc Etch|Barc Etch]]
*[[/SiO2 Etch|SiO2 Etch]]
*[[/SiO2 Etch|SiO2 Etch]]
*[[/SiN Etch|Silicon Nitride Etch]]  
*[[/Nitride Etch|Nitride etch with SiO2 etch recipes]]
*[[/Slow etch|Slow etch of silicon nitride and silicon oxide]]
*[[/Slow etch|Slow etch of silicon nitride and silicon oxide]]


'''Hardware changes'''
A few hardware modifications have been made on the Pegasus 3/4 since it was installed in 2019. The changes are listed below.


*[[Specific Process Knowledge/Etch/DRIE-Pegasus 4/showerheadchange|Change of showerhead in 2019]]





Latest revision as of 10:38, 22 August 2023

Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal

Pegasus 4 - 150mm silicon oxide and silicon nitride etching

The DRIE-Pegasus3 and DRIE-Pegasus4 operator station and cassette loading stations, Photo: DTU Nanolab internal

DRIE-Pegasus 4 is dedicated Silicon oxide and Silicon nitride etching. It is originally designed for silicon etching but gas mass flow controllers has been changed to optimize silicon oxide and silicon nitride etching. The system is setup for 6" wafers. Sampler samples has to be bonded to a 6" carrier to be etched in the system.

The user manual and contact information can be found in LabManager:

DRIE Pegasus 4 in LabManager - requires login

Process information

Standard recipes



Wafer bonding

To find information on how to bond wafers or chips to a carrier wafer, click here.