Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions
Tag: Manual revert |
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Development/Developer_TMAH_UV-lithography_processing click here]''' | |||
[[Category: Equipment|Lithography]] | |||
[[Category: Lithography]] | |||
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=General Process Information= | =General Process Information= | ||
Processing on Developer TMAH UV-lithography consists of the following steps: | Processing on Developer TMAH UV-lithography consists of the following steps: | ||
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'''2.2µm AZ 5214E:''' (image reversal) | '''2.2µm AZ 5214E:''' (image reversal) | ||
*Reversal bake: 60s-120s @ 110°C | *Reversal bake: 60s-120s @ 110°C | ||
*Flood exposure: ~ | *Flood exposure: ~500 mJ/cm<sup>2</sup> | ||
*Development: SP 60s | *Development: SP 60s | ||
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Multiple puddle: | Multiple puddle: | ||
*'''( | *'''(1019) DCH 100mm MP 3x60s''' | ||
*'''(1010) DCH 100mm MP 4x60s''' | *'''(1010) DCH 100mm MP 4x60s''' | ||
*'''(1012) DCH 100mm MP 5x60s''' | *'''(1012) DCH 100mm MP 5x60s''' | ||