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== Deposition of Silver ==
== Deposition of silver ==
Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.


== Sputter deposition of silver ==


* [[Specific Process Knowledge/Thin film deposition/Lesker |Sputter deposition of Silver in Lesker]].


== Sputter deposition of Silver ==
== Thermal deposition of silver ==
 
* [[/Sputter Ag in Wordentec|Sputter deposition of Silver in Wordentec]].
 
== Thermal deposition of Silver ==
 
* [[/Deposition of Silver|Thermal deposition of Silver in Wordentec]]
 
* [[/Deposition of Silver in Thermal Evaporator|Thermal deposition of Silver in the Thermal Evaporator]]  
* [[/Deposition of Silver in Thermal Evaporator|Thermal deposition of Silver in the Thermal Evaporator]]  
<br>
<br>


==Comparison of deposition equipment for silver==
==Comparison of Deposition Equipment for Silver==
{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
|-style="background:silver; color:black"
|-style="background:silver; color:black"


!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
| E-beam deposition of Ag
| E-beam deposition of Ag (line-of-sight, very good thickness uniformity)
| Thermal deposition of Ag
| Thermal deposition of Ag (line-of-sight)
| Thermal deposition of Ag
| Sputter deposition of Ag (some step coverage)
| Sputter deposition of Ag
| Sputter deposition of Ag
| Sputter deposition of Ag including pulsed DC and HiPIMS
| Sputter deposition of Ag including pulsed DC and HiPIMS
|-
|-
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! Pre-clean
! Pre-clean
| Ar ion beam bombardment
| Ar ion etch (only in E-beam evaporator Temescal)
| none
| none
| none
| none
| RF Ar clean  
| RF Ar clean  
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|10Å to 1µm*
|10Å to 1µm*
|10Å to 0.5µm **  
|10Å to 0.5µm **  
|10Å to 0.5µm **(0.5µm not on all wafers)
|10Å to about 3000Å
|10Å to about 2000Å  
|10Å to about 2000Å  
|10Å to ?  
|10Å to ?  
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|1 to 10Å/s
|1 to 10Å/s
|5Å/s
|5Å/s
|1 to 10Å/s
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook).
|Dependent on process parameters.
|Dependent on process parameters.
|Dependent on process parameters.
|Dependent on process parameters.
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|
|
*Up to 4x6" wafers or
*Up to 4x6" wafers or
*Up to 3x8" wafers *** or
*Up to 3x8" wafers
or
*smaller pieces
*smaller pieces
|
|
*Up to 1x8" wafers
*Up to 1x8" wafer or 1x6" wafer
*Up to 3x4" wafers
*smaller pieces
*smaller pieces
very bad uniformity above 4" wafers
|
*6x6" wafers or
*6x4" wafers or
*24x2" wafers
|
*6x6" wafers or
*6x4" wafers or
*24x2" wafers
|
|
*1x6" wafers or
*1x6" wafers or
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*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
|
|
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
*Almost any as long as it does not outgas. See cross-contamination sheet in Labmanager.
|
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
|
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
|
|
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
* Almost any that do not degas. See also the [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=244 cross-contamination sheet]
|
|
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
*Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
|-style="background:whitesmoke; color:black"
|-style="background:whitesmoke; color:black"
! Comment
! Comment
| Pumpdown approx 20 min. Possible to tilt the wafer.
| Pumpdown approx 20 min. Possible to tilt the wafer to achieve tunable step coverage.
| Pumpdown approx 15 min.
| Pumpdown approx 15 min.
| Only very thin layers. Pumpdown approx 1 hour.
|Load and transfer < 10 minutes
|
|
|Load and transfer approx. 12 minutes
|Load and transfer approx. 12 minutes
|-
|-
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'''**'''  ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk''
'''**'''  ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk''
'''***'''  ''Please ask responsible staff for 8" wafer holder''

Latest revision as of 23:57, 7 July 2025

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Unless otherwise stated, this page is written by DTU Nanolab internal


Deposition of silver

Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.

Sputter deposition of silver

Thermal deposition of silver



Comparison of Deposition Equipment for Silver

E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) Thermal evaporation (Thermal Evaporator) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Ag (line-of-sight, very good thickness uniformity) Thermal deposition of Ag (line-of-sight) Sputter deposition of Ag (some step coverage) Sputter deposition of Ag including pulsed DC and HiPIMS
Pre-clean Ar ion etch (only in E-beam evaporator Temescal) none RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm* 10Å to 0.5µm ** 10Å to about 2000Å 10Å to ?
Deposition rate 1 to 10Å/s 5Å/s Dependent on process parameters. Dependent on process parameters.
Batch size
  • Up to 4x6" wafers or
  • Up to 3x8" wafers
or
  • smaller pieces
  • Up to 1x8" wafer or 1x6" wafer
  • Up to 3x4" wafers
  • smaller pieces
  • 1x6" wafers or
  • 1x4" wafers or
  • smaller pieces
  • up to 10x6" wafers or
  • up to 10x4" wafers or
  • many smaller pieces
Allowed materials
  • Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
  • Almost any as long as it does not outgas. See cross-contamination sheet in Labmanager.
  • Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for PC1 and PC3
Comment Pumpdown approx 20 min. Possible to tilt the wafer to achieve tunable step coverage. Pumpdown approx 15 min. Load and transfer < 10 minutes Load and transfer approx. 12 minutes

* For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk

** For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk

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