Specific Process Knowledge/Thin film deposition/Deposition of Platinum: Difference between revisions

← Older edit

VisualWikitext

@@ Line 1: / Line 1: @@
-'''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Platinum click here]'''
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of__Platinum click here]'''
 <i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
@@ Line 14: / Line 14: @@
 |-style="background:silver; color:black"
 !
-! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
+! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
-! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
 ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
+! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
 |-
 |-style="background:WhiteSmoke; color:black"
 ! General description
 |E-beam deposition of Pt
-|E-beam deposition of Pt
+|Sputter deposition of Pt
 |Sputter deposition of Pt
 |-
@@ Line 27: / Line 27: @@
 ! Pre-clean
-|Ar ion source
+|Ar ion etch (only in E-beam evaporator Temescal)
 |none
 |RF Ar clean
@@ Line 36: / Line 37: @@
 |10Å - 600nm*
 |10Å - 600nm*
-|10Å - 600nm*
+|10Å - ? ''discuss with staff''
 |-
 |-style="background:LightGrey; color:black"
 ! Deposition rate
-|0.5Å/s to 10Å/s
 |0.5Å/s to 10Å/s
 |up to 3.74 Å/s
+|''not known yet, probably similar to 'old' Lesker system
 |-
 |-style="background:WhiteSmoke; color:black"
@@ Line 50: / Line 52: @@
 *Up to 3x8" wafers (ask for holder)
 *smaller wafers and pieces
-|
-*24x2" wafers or
-*6x4" wafers or
-*6x6" wafers
 |
 *1x4" wafer or
 *1x6" wafer
 *smaller pieces
+|
+*Up to 10x4" or 6" wafers
+*Many smaller pieces
 |-
 |-
 |-style="background:LightGrey; color:black"
-!Allowed materials
+! Allowed materials
 |
-*Silicon oxide
+Almost any that does not degas at your intended substrate temperature. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
-*Silicon (oxy)nitride
-*Photoresist
-*PMMA
-*Mylar
-*Metals
-*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
 |
-* Silicon
+*Almost any that does not degas.
-* Silicon oxide
-* Silicon (oxy)nitride
-* Photoresist
-* PMMA
-* Mylar
-* SU-8
-* Metals
 |
-* Silicon
+*Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
-* Silicon oxide
-* Silicon nitride
-* Silicon (oxy)nitride
-* Photoresist
-* PMMA
-* Mylar
-* SU-8
-* Metals
-* Carbon
 |-style="background:WhiteSmoke; color:black"
 ! Comment
-|
+| Pt tends to exhibit tensile stress, see section on [[Specific Process Knowledge/Characterization/Stress measurement|stress in thin films]].
-|
 |
 |
 |}
-'''*''' ''If depositing a total of more than 600 nm, please write to metal@danchip.dtu.dk well in advance to ensure that enough material is present.''
+'''*''' ''If depositing a total of more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.''