Specific Process Knowledge/Thin film deposition/Deposition of CrSi: Difference between revisions
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<i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br> | <i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br> | ||
All images and photos on this page | All images and photos on this page belongs to <b>DTU Nanolab</b>.<br> | ||
The fabrication and characterization described below were conducted in <b>2021-2022 by Evgeniy Shkondin</b> and <b>Henri Jansen, DTU Nanolab</b>.<br></i> | The fabrication and characterization described below were conducted in <b>2021-2022 by Evgeniy Shkondin</b> and <b>Henri Jansen, DTU Nanolab</b>.<br></i> | ||
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It must be mentioned that the dark space shield should be in a “closed-form” only, as it was observed that the “opened” dark space shield configuration can do a side wall Cu sputtering. This will heavily contaminate the film and gradually damage the tool. | It must be mentioned that the dark space shield should be in a “closed-form” only, as it was observed that the “opened” dark space shield configuration can do a side wall Cu sputtering. This will heavily contaminate the film and gradually damage the tool. | ||
<gallery caption="Si target with dark space shield configuration and measured uniformity of deposited Si. " widths=" | <gallery caption="Si target with dark space shield configuration and measured uniformity of deposited Si. " widths="400px" heights="350px" perrow="2"> | ||
image:eves_closed_dark_space_shield.png| Closed dark space shield configuration. | image:eves_closed_dark_space_shield.png| Closed dark space shield configuration. | ||
image:eves_Si_120W_20211110.png|Uniformity of deposited Si layer across 6" wafer. | image:eves_Si_120W_20211110.png|Uniformity of deposited Si layer across 6" wafer. | ||