Specific Process Knowledge/Back-end processing/Polishing machine: Difference between revisions

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== Polisher/Lapper ==
== Polisher/Lapper ==


[[image:Logitech pm5 1.jpg|400px|right|thumb|The Logitech PM5 Polisher/Lapper]]
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Training is required before using th machine. The machine is equipped with a LabManager lock.
<!-- copyright issue rkc [[image:Logitech pm5 1.jpg|400px|right|thumb|The Logitech PM5 Polisher/Lapper]]
Training is required before using th machine. The machine is equipped with a LabManager lock.-->


The Logitech PM5 Polisher/Lapper is for thinning down wafers and other substrates.  
The Logitech PM5 Polisher/Lapper is for thinning down wafers and other substrates.  
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==Equipment performance and process related parameters==
==Equipment performance and process related parameters==


[[File:IMG_20230228_113121.jpg|thumb|350px|PM5 lapper in Fume hood]]
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*Allowed material 3 -->
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[[File:IMG_20230228_113134.jpg|thumb|left|300px|lapping jig]]
[[File:IMG_20230228_113127.jpg|thumb|1000px|mounting/measuring space]]


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Latest revision as of 14:24, 28 February 2023

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Polisher/Lapper

The Logitech PM5 Polisher/Lapper is for thinning down wafers and other substrates.

The user manual, user APV, technical information and contact information can be found in LabManager:

The Logitech PM5 Polisher/Lapper in LabManager

Equipment performance and process related parameters

PM5 lapper in Fume hood
Equipment Polisher/Lapper
Purpose

Thinning of substrates of

  • InP
  • GaAs
  • Silicon
  • Metals
  • Glass/Quartz
Performance Thinning
  • Removal rate: 1-10µm/min
  • Thickness accuracy: +/- 10 µm
  • Thickness homogeneity: +/- 10 µm
  • Roughness: +/- ? µm
Polishing
  • Removal rate: ~1 µm/min
  • Thickness accuracy: ? µm
  • Thickness homogeneity: ? µm
  • Roughness: +/- ? µm
Process parameter range Polishing liquid
  • Al2O3 (alumina) powder: 3, 9 or 20 µm
  • Chemlox (for polishing)
  • SF1 Polishing Fluid (for polishing e.g. SiO2)
Polishing cloths
  • Chemcloth Polishing Cloths (for use with SF1 liquid)
Rotation speed
  • Thinning: 5-20 rpm
  • Polishing: 5-80 rpm
Arm sweep
  • Thinning: stationary
  • Polishing: 12% (inner) - 80% (outer)
Substrates Batch size
  • # small samples
  • one 50 mm wafer
  • one 100 mm wafer
Allowed materials
  • InP
  • GaAs
  • Silicon
  • Metals
  • Glass/Quartz
lapping jig
mounting/measuring space